AM6441P Datasheet and Replacement
Type Designator: AM6441P
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: TSSOP-8
AM6441P substitution
AM6441P Datasheet (PDF)
am6441p.pdf

Analog Power AM6441PP-Channel 40-V (D-S) MOSFETPRODUCT SUMMARYThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat 28 @ VGS = -10V -6.6dissipation. Typical applications are DC-DC -40converters and power management in portable and 45 @ VGS = -4.5V -5.2
Datasheet: AM60N10-13D , AM60N10-70P , AM60N10-70PCFM , AM60P04-10D , AM6378 , AM6401 , AM6411P , AM6415 , IRF9540 , AM6520C , AM6544C , AM6602 , AM6612N , AM6612NE , AM6802 , AM6920NH , AM6921P .
History: HUFA75337P3 | IPP90R800C3 | AP3A010MT | YTF531 | 2N5116 | 2SK2467 | AOWF190A60
Keywords - AM6441P MOSFET datasheet
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History: HUFA75337P3 | IPP90R800C3 | AP3A010MT | YTF531 | 2N5116 | 2SK2467 | AOWF190A60



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