All MOSFET. AM6520C Datasheet

 

AM6520C Datasheet and Replacement


   Type Designator: AM6520C
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 4.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 24 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.047 Ohm
   Package: TSSOP-8
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AM6520C Datasheet (PDF)

 ..1. Size:136K  analog power
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AM6520C

Analog Power AM6520CP & N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARYVDS (V) rDS(on) m()ID (A)These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures 47 @ VGS = 4.5V 4.7minimal power loss and conserves energy, making 20 66 @ VGS = 2.5V 3.9this device ideal for use in power management 95 @ VGS = 1.8V 3.3circuitry. Typical applications are P

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History: TK2P60D | IRFBG20

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