AM6612NE Specs and Replacement

Type Designator: AM6612NE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: SOIC-8

AM6612NE substitution

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AM6612NE datasheet

 ..1. Size:199K  analog power
 am6612ne.pdf pdf_icon

AM6612NE

Analog Power AM6612NE N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( )ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 22 @ VGS = 10V 9.4 30 converters and power management in portable and 30 @ VGS = 4.5V 7.0 batte... See More ⇒

 7.1. Size:322K  analog power
 am6612n.pdf pdf_icon

AM6612NE

Analog Power AM6612N N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 22 @ VGS = 10V 9.7 Low thermal impedance 30 30 @ VGS = 4.5V 8.3 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM R... See More ⇒

Detailed specifications: AM6401, AM6411P, AM6415, AM6441P, AM6520C, AM6544C, AM6602, AM6612N, IRF630, AM6802, AM6920NH, AM6921P, AM6922NH, AM6923P, AM6924NHE, AM6930N, AM6968N

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