AM6612NE Datasheet and Replacement
Type Designator: AM6612NE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: SOIC-8
AM6612NE substitution
AM6612NE Datasheet (PDF)
am6612ne.pdf

Analog Power AM6612NEN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 22 @ VGS = 10V 9.430converters and power management in portable and 30 @ VGS = 4.5V 7.0batte
am6612n.pdf

Analog Power AM6612NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)22 @ VGS = 10V9.7 Low thermal impedance 3030 @ VGS = 4.5V8.3 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM R
Datasheet: AM6401 , AM6411P , AM6415 , AM6441P , AM6520C , AM6544C , AM6602 , AM6612N , 7N65 , AM6802 , AM6920NH , AM6921P , AM6922NH , AM6923P , AM6924NHE , AM6930N , AM6968N .
History: STL30P3LLH6 | PA002FMA
Keywords - AM6612NE MOSFET datasheet
AM6612NE cross reference
AM6612NE equivalent finder
AM6612NE lookup
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AM6612NE replacement
History: STL30P3LLH6 | PA002FMA



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