All MOSFET. AM6612NE Datasheet

 

AM6612NE Datasheet and Replacement


   Type Designator: AM6612NE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: SOIC-8
 

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AM6612NE Datasheet (PDF)

 ..1. Size:199K  analog power
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AM6612NE

Analog Power AM6612NEN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 22 @ VGS = 10V 9.430converters and power management in portable and 30 @ VGS = 4.5V 7.0batte

 7.1. Size:322K  analog power
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AM6612NE

Analog Power AM6612NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)22 @ VGS = 10V9.7 Low thermal impedance 3030 @ VGS = 4.5V8.3 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM R

Datasheet: AM6401 , AM6411P , AM6415 , AM6441P , AM6520C , AM6544C , AM6602 , AM6612N , IRF630 , AM6802 , AM6920NH , AM6921P , AM6922NH , AM6923P , AM6924NHE , AM6930N , AM6968N .

History: ME7845S-G | 8N65KG-TM3-T | PMCM4401VNE

Keywords - AM6612NE MOSFET datasheet

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