All MOSFET. AM6930N Datasheet

 

AM6930N MOSFET. Datasheet pdf. Equivalent


   Type Designator: AM6930N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 5.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4 nC
   trⓘ - Rise Time: 8 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: SO-8

 AM6930N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AM6930N Datasheet (PDF)

 ..1. Size:189K  analog power
am6930n.pdf

AM6930N AM6930N

Analog Power AM6930NDual N-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m() ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 40 @ VGS = 10V 5.530circuitry. Typical applications are PWMDC-DC 55 @ VGS = 4.5V 4.8conver

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