AM6930N Specs and Replacement

Type Designator: AM6930N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: SO-8

AM6930N substitution

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AM6930N datasheet

 ..1. Size:189K  analog power
 am6930n.pdf pdf_icon

AM6930N

Analog Power AM6930N Dual N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m( ) ID (A) minimal power loss and conserves energy, making this device ideal for use in power management 40 @ VGS = 10V 5.5 30 circuitry. Typical applications are PWMDC-DC 55 @ VGS = 4.5V 4.8 conver... See More ⇒

Detailed specifications: AM6612N, AM6612NE, AM6802, AM6920NH, AM6921P, AM6922NH, AM6923P, AM6924NHE, IRF4905, AM6968N, AM6968NE, AM6968NH, AM7000N, AM7001P, AM70N03-04D, AM70N03-08D, AM70N04-06D

Keywords - AM6930N MOSFET specs

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