AM6930N MOSFET. Datasheet pdf. Equivalent
Type Designator: AM6930N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 5.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 4 nC
trⓘ - Rise Time: 8 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: SO-8
AM6930N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AM6930N Datasheet (PDF)
am6930n.pdf
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Analog Power AM6930NDual N-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m() ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 40 @ VGS = 10V 5.530circuitry. Typical applications are PWMDC-DC 55 @ VGS = 4.5V 4.8conver
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