IRFHE4250D MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFHE4250D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 156 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
|Id|ⓘ - Maximum Drain Current: 86 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 13 nC
trⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 493 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00275 Ohm
Package: PQFN6X6
IRFHE4250D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFHE4250D Datasheet (PDF)
irfhe4250d.pdf
FASTIRFET IRFHE4250DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS(on) max 4.10 1.35 m(@VGS = 4.5V) Qg (typical) 13 35 nC ID 60 60 A(@TC = 25C) Applications Control and Synchronous MOSFETs for synchronous buck converters DUAL PQFN 6X6 mm Features Benefits Control and synchronous MOSFETs in one package Increased power density Lo
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100