All MOSFET. IRFHE4250D Datasheet

 

IRFHE4250D Datasheet and Replacement


   Type Designator: IRFHE4250D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 86 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 493 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00275 Ohm
   Package: PQFN6X6
 

 IRFHE4250D substitution

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IRFHE4250D Datasheet (PDF)

 ..1. Size:377K  international rectifier
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IRFHE4250D

FASTIRFET IRFHE4250DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS(on) max 4.10 1.35 m(@VGS = 4.5V) Qg (typical) 13 35 nC ID 60 60 A(@TC = 25C) Applications Control and Synchronous MOSFETs for synchronous buck converters DUAL PQFN 6X6 mm Features Benefits Control and synchronous MOSFETs in one package Increased power density Lo

Datasheet: IRFH8311 , IRFH8316 , IRFH8318PBF , IRFH8321 , IRFH8325PBF , IRFH8330PBF , IRFH8334PBF-1 , IRFH8337PBF , 2SK3918 , IRFHM3911 , IRFHM4226 , IRFHM4231 , IRFHM4234 , IRFHM7194 , IRFHM8228 , IRFHM8235 , IRFHM830DPBF .

History: LNG03R031 | DMG9926UDM

Keywords - IRFHE4250D MOSFET datasheet

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