IRFHE4250D Specs and Replacement

Type Designator: IRFHE4250D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 86 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 493 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00275 Ohm

Package: PQFN6X6

IRFHE4250D substitution

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IRFHE4250D datasheet

 ..1. Size:377K  international rectifier
 irfhe4250d.pdf pdf_icon

IRFHE4250D

FASTIRFET IRFHE4250DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS(on) max 4.10 1.35 m (@VGS = 4.5V) Qg (typical) 13 35 nC ID 60 60 A (@TC = 25 C) Applications Control and Synchronous MOSFETs for synchronous buck converters DUAL PQFN 6X6 mm Features Benefits Control and synchronous MOSFETs in one package Increased power density Lo... See More ⇒

Detailed specifications: IRFH8311, IRFH8316, IRFH8318PBF, IRFH8321, IRFH8325PBF, IRFH8330PBF, IRFH8334PBF-1, IRFH8337PBF, EMB04N03H, IRFHM3911, IRFHM4226, IRFHM4231, IRFHM4234, IRFHM7194, IRFHM8228, IRFHM8235, IRFHM830DPBF

Keywords - IRFHE4250D MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.