All MOSFET. AM7910N Datasheet

 

AM7910N Datasheet and Replacement


   Type Designator: AM7910N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 8.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 171 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: DFN5X6
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AM7910N Datasheet (PDF)

 ..1. Size:291K  analog power
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AM7910N

Analog Power AM7910NDual N-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)25 @ VGS = 10V8.4 Low thermal impedance 10028 @ VGS = 4.5V7.9 Fast switching speed Typical Applications: DFN5X6-8L LED Inverter Circuits DC/DC Conversion Circuits Motor drives ABSOLUTE MAXIMUM RAT

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History: FDC3601N | NP180N04TUJ | SSW65R190S2 | SRT10N160LD | SM4186T9RL | APT10021JFLL | BUK6218-40C

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