All MOSFET. AM8881 Datasheet

 

AM8881 Datasheet and Replacement


   Type Designator: AM8881
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.2 nS
   Cossⓘ - Output Capacitance: 232 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: DFN2X5
 

 AM8881 substitution

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AM8881 Datasheet (PDF)

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AM8881

AiT Semiconductor Inc. AM8881 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM8881 uses advanced trench technology to V = 20V, I = 11A DS Dprovide excellent R , low gate charge and R

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AM8881

AiT Semiconductor Inc. AM8882 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM8882 uses advanced trench technology to V = 20V, I = 8A DS Dprovide excellent R , low gate charge and Typ.R = 9.5m @ V = 4.5V DS(ON) DS(ON) GSoperation with gate voltages as low as 1.8V. The Typ.R = 13m @ V = 2.5V DS(ON) GSdevice is suitable for use

Datasheet: AM8205 , AM8206 , AM8208 , AM8810 , AM8811 , AM8812 , AM8814 , AM8820 , IRF1404 , AM8882 , AM8958 , AM8958C , AM8N20-600D , AM8N25-550D , AM90N02-04D , AM90N03-01P , AM90N03-02D .

History: BL30N65-F | 2SK568

Keywords - AM8881 MOSFET datasheet

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