AM8881 Specs and Replacement
Type Designator: AM8881
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.2 nS
Cossⓘ - Output Capacitance: 232 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: DFN2X5
AM8881 substitution
- MOSFET ⓘ Cross-Reference Search
AM8881 datasheet
am8881.pdf
AiT Semiconductor Inc. AM8881 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM8881 uses advanced trench technology to V = 20V, I = 11A DS D provide excellent R , low gate charge and R ... See More ⇒
am8882.pdf
AiT Semiconductor Inc. AM8882 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM8882 uses advanced trench technology to V = 20V, I = 8A DS D provide excellent R , low gate charge and Typ.R = 9.5m @ V = 4.5V DS(ON) DS(ON) GS operation with gate voltages as low as 1.8V. The Typ.R = 13m @ V = 2.5V DS(ON) GS device is suitable for use... See More ⇒
Detailed specifications: AM8205, AM8206, AM8208, AM8810, AM8811, AM8812, AM8814, AM8820, IRF1404, AM8882, AM8958, AM8958C, AM8N20-600D, AM8N25-550D, AM90N02-04D, AM90N03-01P, AM90N03-02D
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
