All MOSFET. AM8958C Datasheet

 

AM8958C Datasheet and Replacement


   Type Designator: AM8958C
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 32 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm
   Package: SO-8
 

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AM8958C Datasheet (PDF)

 ..1. Size:237K  analog power
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AM8958C

Analog Power AM8958CP & N-Channel 32-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m()ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 40 @ VGS = 4.5V 6.032circuitry. Typical applications are PWMDC-DC 29 @ V = 10V 7.0GSconver

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AM8958C

AiT Semiconductor Inc. AM8958 www.ait-ic.com MOSFET N+P PAIR ENHANCEMENT MODE DESCRIPTION FEATURES The AM8958 is the N & P-Channel enhancement N-Channel mode power field effect transistor using high cell 30V /6.8A, R = 23m(typ.)@V = 10V DS(ON) GSdensity DMOS trench technology. This high density 30V /6.5A, R = 34m(typ.)@V = 4.5V DS(ON) GSprocess is especially tailor

Datasheet: AM8810 , AM8811 , AM8812 , AM8814 , AM8820 , AM8881 , AM8882 , AM8958 , IRF630 , AM8N20-600D , AM8N25-550D , AM90N02-04D , AM90N03-01P , AM90N03-02D , AM90N03-03B , AM90N03-03P , AM90N03-04D .

History: IRLU8203PBF | MSF14N60

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