AM8958C Specs and Replacement
Type Designator: AM8958C
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 32 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm
Package: SO-8
AM8958C substitution
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AM8958C datasheet
am8958c.pdf
Analog Power AM8958C P & N-Channel 32-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m( )ID (A) minimal power loss and conserves energy, making this device ideal for use in power management 40 @ VGS = 4.5V 6.0 32 circuitry. Typical applications are PWMDC-DC 29 @ V = 10V 7.0 GS conver... See More ⇒
am8958.pdf
AiT Semiconductor Inc. AM8958 www.ait-ic.com MOSFET N+P PAIR ENHANCEMENT MODE DESCRIPTION FEATURES The AM8958 is the N & P-Channel enhancement N-Channel mode power field effect transistor using high cell 30V /6.8A, R = 23m (typ.)@V = 10V DS(ON) GS density DMOS trench technology. This high density 30V /6.5A, R = 34m (typ.)@V = 4.5V DS(ON) GS process is especially tailor... See More ⇒
Detailed specifications: AM8810, AM8811, AM8812, AM8814, AM8820, AM8881, AM8882, AM8958, IRF640N, AM8N20-600D, AM8N25-550D, AM90N02-04D, AM90N03-01P, AM90N03-02D, AM90N03-03B, AM90N03-03P, AM90N03-04D
Keywords - AM8958C MOSFET specs
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