AM9569D Datasheet and Replacement
Type Designator: AM9569D
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 26 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 14 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 80 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: TO-252
AM9569D Datasheet (PDF)
am9569d.pdf

AM9569D P-CHANNEL ENHANCEMENT MODE POWER MOSFET GENERAL DESCRIPTION The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. FEATURES Simple Drive Requirement BVDSS -40V 90m Fast Switching Characteristic RDS(ON) RoHS Compliant & Halogen-Free ID
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: FQPF9N25CT | 2SK3987-01S | TP0101TS-T1 | MTN2310N3 | NTTFS4C10NTAG | IRHYB67134CM | FQU6N40CTU
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History: FQPF9N25CT | 2SK3987-01S | TP0101TS-T1 | MTN2310N3 | NTTFS4C10NTAG | IRHYB67134CM | FQU6N40CTU



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