AM9926N Datasheet and Replacement
Type Designator: AM9926N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 6.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 78 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SO-8
AM9926N substitution
AM9926N Datasheet (PDF)
am9926n.pdf

Analog Power AM9926NN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)30 @ VGS = 4.5V6.9 Low thermal impedance 2040 @ VGS = 2.5V6.0 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM
am9926.pdf

AiT Semiconductor Inc. AM9926 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM9926 uses advanced trench technology and V =20V, I =6A DS Ddesign to provide excellent R with low gate R
Datasheet: AM90P20-170B , AM9410N , AM9412N , AM9433P , AM9435 , AM9435P , AM9569D , AM9926 , AON6380 , AM9945N , AM9945NE , AM9N65P , STN1012 , STN1304 , STN1810 , STN18D20 , STN1NF20 .
History: NVMTS0D6N04C
Keywords - AM9926N MOSFET datasheet
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History: NVMTS0D6N04C



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