All MOSFET. AM9945NE Datasheet

 

AM9945NE Datasheet and Replacement


   Type Designator: AM9945NE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.089 Ohm
   Package: SOIC-8
 

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AM9945NE Datasheet (PDF)

 ..1. Size:196K  analog power
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AM9945NE

Analog Power AM9945NEN-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 89 @ VGS = 10V 4.060battery-powered products suc

 7.1. Size:323K  analog power
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AM9945NE

Analog Power AM9945NN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)89 @ VGS = 10V3.6 Low thermal impedance 60104 @ VGS = 4.5V3.4 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

Datasheet: AM9412N , AM9433P , AM9435 , AM9435P , AM9569D , AM9926 , AM9926N , AM9945N , K2611 , AM9N65P , STN1012 , STN1304 , STN1810 , STN18D20 , STN1NF20 , STN2018 , STN2300 .

History: IXTH90P10P | DMG8880LSS | C3M0065100K | CS65N20-30 | IXFV110N10P | IPB120N08S4-03 | SQM90142E

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