All MOSFET. AM9945NE Datasheet

 

AM9945NE MOSFET. Datasheet pdf. Equivalent


   Type Designator: AM9945NE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 3.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 3.6 nC
   trⓘ - Rise Time: 10 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.089 Ohm
   Package: SOIC-8

 AM9945NE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AM9945NE Datasheet (PDF)

 ..1. Size:196K  analog power
 am9945ne.pdf

AM9945NE AM9945NE

Analog Power AM9945NEN-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 89 @ VGS = 10V 4.060battery-powered products suc

 7.1. Size:323K  analog power
 am9945n.pdf

AM9945NE AM9945NE

Analog Power AM9945NN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)89 @ VGS = 10V3.6 Low thermal impedance 60104 @ VGS = 4.5V3.4 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

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