All MOSFET. AM9N65P Datasheet

 

AM9N65P Datasheet and Replacement


   Type Designator: AM9N65P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 123 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm
   Package: TO-220AB
 

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AM9N65P Datasheet (PDF)

 ..1. Size:286K  analog power
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AM9N65P

Analog Power AM9N65PN-Channel 650-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) ()VDS (V) ID(A) Low r trench technology DS(on)1.7 @ VGS = 10V Low thermal impedance 6509a1.8 @ VGS = 6V Fast switching speed Typical Applications: Off-line Power Supplies Electronic Ballasts DRAIN connected High Power LED Lighting to TAB ABSOLUTE

Datasheet: AM9433P , AM9435 , AM9435P , AM9569D , AM9926 , AM9926N , AM9945N , AM9945NE , MMIS60R580P , STN1012 , STN1304 , STN1810 , STN18D20 , STN1NF20 , STN2018 , STN2300 , STN2300A .

History: IPW60R099CPA | IXFV30N60P

Keywords - AM9N65P MOSFET datasheet

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