STN1012 Specs and Replacement

Type Designator: STN1012

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.27 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.65 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: SOT-523

STN1012 substitution

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STN1012 datasheet

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STN1012

STN1012 STN1012 STN1012 STN1012 Dual N Channel Enhancement Mode MOSFET 0.65A DESCRIPTION DESCRIPTION DESCRIPTION DESCRIPTION STN1012 is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.... See More ⇒

Detailed specifications: AM9435, AM9435P, AM9569D, AM9926, AM9926N, AM9945N, AM9945NE, AM9N65P, 75N75, STN1304, STN1810, STN18D20, STN1NF20, STN2018, STN2300, STN2300A, STN2302

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