All MOSFET. STN1012 Datasheet

 

STN1012 Datasheet and Replacement


   Type Designator: STN1012
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 0.65 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: SOT-523
 

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STN1012 Datasheet (PDF)

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STN1012

STN1012STN1012STN1012STN1012Dual N Channel Enhancement Mode MOSFET0.65ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONSTN1012 is the N-Channel enhancement mode power field effect transistors areproduced using high cell density, DMOS trench technology. This high density process isespecially tailored to minimize on-state resistance and provide superior switchingperformance.

Datasheet: AM9435 , AM9435P , AM9569D , AM9926 , AM9926N , AM9945N , AM9945NE , AM9N65P , IRF520 , STN1304 , STN1810 , STN18D20 , STN1NF20 , STN2018 , STN2300 , STN2300A , STN2302 .

History: CEB6086 | AP60WN2K3H | CSD25302Q2

Keywords - STN1012 MOSFET datasheet

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