All MOSFET. STN1012 Datasheet

 

STN1012 Datasheet and Replacement


   Type Designator: STN1012
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 0.65 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: SOT-523
      - MOSFET Cross-Reference Search

 

STN1012 Datasheet (PDF)

 ..1. Size:276K  stansontech
 stn1012.pdf pdf_icon

STN1012

STN1012STN1012STN1012STN1012Dual N Channel Enhancement Mode MOSFET0.65ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONSTN1012 is the N-Channel enhancement mode power field effect transistors areproduced using high cell density, DMOS trench technology. This high density process isespecially tailored to minimize on-state resistance and provide superior switchingperformance.

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: IRF7402PBF | PQ6S2JN | ZXM66P02N8TC | NTP30N06 | SIF5N65F | HGP098N10S | IRFB52N15D

Keywords - STN1012 MOSFET datasheet

 STN1012 cross reference
 STN1012 equivalent finder
 STN1012 lookup
 STN1012 substitution
 STN1012 replacement

 

 
Back to Top

 


 
.