All MOSFET. STN1012 Datasheet

 

STN1012 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STN1012
   Marking Code: X
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 0.65 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1.2 nC
   trⓘ - Rise Time: 8 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: SOT-523

 STN1012 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STN1012 Datasheet (PDF)

 ..1. Size:276K  stansontech
 stn1012.pdf

STN1012 STN1012

STN1012STN1012STN1012STN1012Dual N Channel Enhancement Mode MOSFET0.65ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONSTN1012 is the N-Channel enhancement mode power field effect transistors areproduced using high cell density, DMOS trench technology. This high density process isespecially tailored to minimize on-state resistance and provide superior switchingperformance.

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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