STN3P6F6 MOSFET. Datasheet pdf. Equivalent
Type Designator: STN3P6F6
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 5.3 nS
Cossⓘ - Output Capacitance: 40 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
Package: SOT-223
STN3P6F6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STN3P6F6 Datasheet (PDF)
stn3p6f6.pdf
STN3P6F6P-channel 60 V, 0.13 typ., 3 A STripFET VI DeepGATE Power MOSFET in a SOT-223 packageDatasheet - production dataFeaturesOrder code VDSS RDS(on)max ID4STN3P6F6 60 V 0.16 @ 10 V 3 A RDS(on) * Qg industry benchmark32 Extremely low on-resistance RDS(on)1 High avalanche ruggednessSOT-223 Low gate drive power lossesApplications Swit
stn3pf06.pdf
STN3PF06P-channel 60 V - 0.20 - 2.5 A - SOT-223STripFET II Power MOSFETFeaturesRDS(on) Type VDSS IDmax2STN3PF06 60 V
stn3pf06.pdf
STN3PF06www.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.055 at VGS = - 10 V - 7.0APPLICATIONS- 60 30 nC0.065 at VGS = - 4.5 V - 6.0 Load SwitchSSOT-223GDSDGDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Paramet
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