All MOSFET. STN3P6F6 Datasheet

 

STN3P6F6 Datasheet and Replacement


   Type Designator: STN3P6F6
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 5.3 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: SOT-223
 

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STN3P6F6 Datasheet (PDF)

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STN3P6F6

STN3P6F6P-channel 60 V, 0.13 typ., 3 A STripFET VI DeepGATE Power MOSFET in a SOT-223 packageDatasheet - production dataFeaturesOrder code VDSS RDS(on)max ID4STN3P6F6 60 V 0.16 @ 10 V 3 A RDS(on) * Qg industry benchmark32 Extremely low on-resistance RDS(on)1 High avalanche ruggednessSOT-223 Low gate drive power lossesApplications Swit

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STN3P6F6

STN3PF06P-channel 60 V - 0.20 - 2.5 A - SOT-223STripFET II Power MOSFETFeaturesRDS(on) Type VDSS IDmax2STN3PF06 60 V

 9.2. Size:778K  cn vbsemi
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STN3P6F6

STN3PF06www.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.055 at VGS = - 10 V - 7.0APPLICATIONS- 60 30 nC0.065 at VGS = - 4.5 V - 6.0 Load SwitchSSOT-223GDSDGDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Paramet

Datasheet: STN2NE10L , STN3400 , STN3400A , STN3404 , STN3406 , STN3414 , STN3446 , STN3456 , IRFP064N , STN4102 , STN410D , STN4110 , STN4130 , STN4186D , STN4189D , STN4346 , STN4392 .

History: IPA60R450E6

Keywords - STN3P6F6 MOSFET datasheet

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