STN4392 Datasheet and Replacement
Type Designator: STN4392
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 320 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: SOP-8
STN4392 substitution
STN4392 Datasheet (PDF)
stn4392.pdf

STN4392STN4392STN4392STN4392N Channel Enhancement Mode MOSFET13ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONSTN4392 is the N-Channel logic enhancement mode power field effect transistorwhich is produced using high cell density, DMOS trench technology. This high densityprocess is especially tailored to minimize on-state resistance. These devices areparticularly suited f
stn4346.pdf

STN4346STN4346STN4346STN4346N Channel Enhancement Mode MOSFET6.8ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONSTN4392 is the N-Channel logic enhancement mode power field effect transistorwhich is produced using high cell density, DMOS trench technology. This high densityprocess is especially tailored to minimize on-state resistance. These devices areparticularly suited
Datasheet: STN3P6F6 , STN4102 , STN410D , STN4110 , STN4130 , STN4186D , STN4189D , STN4346 , IRF540N , STN4402 , STN4412 , STN4416 , STN4426 , STN442D , STN4438 , STN4440 , STN4480 .
History: AP4543GEH-HF
Keywords - STN4392 MOSFET datasheet
STN4392 cross reference
STN4392 equivalent finder
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History: AP4543GEH-HF



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