STN4392 MOSFET. Datasheet pdf. Equivalent
Type Designator: STN4392
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 13 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 12 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 320 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: SOP-8
STN4392 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STN4392 Datasheet (PDF)
stn4392.pdf
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STN4392STN4392STN4392STN4392N Channel Enhancement Mode MOSFET13ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONSTN4392 is the N-Channel logic enhancement mode power field effect transistorwhich is produced using high cell density, DMOS trench technology. This high densityprocess is especially tailored to minimize on-state resistance. These devices areparticularly suited f
stn4346.pdf
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STN4346STN4346STN4346STN4346N Channel Enhancement Mode MOSFET6.8ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONSTN4392 is the N-Channel logic enhancement mode power field effect transistorwhich is produced using high cell density, DMOS trench technology. This high densityprocess is especially tailored to minimize on-state resistance. These devices areparticularly suited
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