All MOSFET. STN4392 Datasheet

 

STN4392 Datasheet and Replacement


   Type Designator: STN4392
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: SOP-8
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STN4392 Datasheet (PDF)

 ..1. Size:374K  stansontech
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STN4392

STN4392STN4392STN4392STN4392N Channel Enhancement Mode MOSFET13ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONSTN4392 is the N-Channel logic enhancement mode power field effect transistorwhich is produced using high cell density, DMOS trench technology. This high densityprocess is especially tailored to minimize on-state resistance. These devices areparticularly suited f

 9.1. Size:344K  stansontech
 stn4346.pdf pdf_icon

STN4392

STN4346STN4346STN4346STN4346N Channel Enhancement Mode MOSFET6.8ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONSTN4392 is the N-Channel logic enhancement mode power field effect transistorwhich is produced using high cell density, DMOS trench technology. This high densityprocess is especially tailored to minimize on-state resistance. These devices areparticularly suited

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: LSC65R280HT | IPB22N03S4L-15 | 2SK3700

Keywords - STN4392 MOSFET datasheet

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