All MOSFET. STN4392 Datasheet

 

STN4392 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STN4392
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: SOP-8

 STN4392 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STN4392 Datasheet (PDF)

 ..1. Size:374K  stansontech
stn4392.pdf

STN4392
STN4392

STN4392STN4392STN4392STN4392N Channel Enhancement Mode MOSFET13ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONSTN4392 is the N-Channel logic enhancement mode power field effect transistorwhich is produced using high cell density, DMOS trench technology. This high densityprocess is especially tailored to minimize on-state resistance. These devices areparticularly suited f

 9.1. Size:344K  stansontech
stn4346.pdf

STN4392
STN4392

STN4346STN4346STN4346STN4346N Channel Enhancement Mode MOSFET6.8ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONSTN4392 is the N-Channel logic enhancement mode power field effect transistorwhich is produced using high cell density, DMOS trench technology. This high densityprocess is especially tailored to minimize on-state resistance. These devices areparticularly suited

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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