All MOSFET. STN6562 Datasheet

 

STN6562 Datasheet and Replacement


   Type Designator: STN6562
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.5 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: TSOP-6
 

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STN6562 Datasheet (PDF)

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STN6562

STN6562 Dual N Channel Enhancement Mode MOSFET 4.0ADESCRIPTION The STN6562 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as cellular phon

Datasheet: STN4842 , STN484D , STN4850 , STN4920 , STN4946 , STN4972 , STN5PF02V , STN6303 , SKD502T , STN7400 , STN80T08 , STN8822 , STN8822A , STN8882D , STP100N10F7 , STP100N8F6 , STP1013 .

History: STN4972 | STN4920

Keywords - STN6562 MOSFET datasheet

 STN6562 cross reference
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