STN6562 Specs and Replacement

Type Designator: STN6562

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.5 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: TSOP-6

STN6562 substitution

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STN6562 datasheet

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STN6562

STN6562 Dual N Channel Enhancement Mode MOSFET 4.0A DESCRIPTION The STN6562 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as cellular phon... See More ⇒

Detailed specifications: STN4842, STN484D, STN4850, STN4920, STN4946, STN4972, STN5PF02V, STN6303, STP75NF75, STN7400, STN80T08, STN8822, STN8822A, STN8882D, STP100N10F7, STP100N8F6, STP1013

Keywords - STN6562 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.