STN80T08 Specs and Replacement

Type Designator: STN80T08

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 450 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: TO-220-3L

STN80T08 substitution

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STN80T08 datasheet

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STN80T08

STN80T08 N Channel Enhancement Mode MOSFET 80.0A DESCRIPTION STN80T08 is used trench technology to provide excellent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION FEATURE TO220-3L 80V/40.0A, RDS(ON) = 8m (Typ.) @VGS = 10V Super high density cell design for extremely low RDS(ON) Exceptional on... See More ⇒

Detailed specifications: STN4850, STN4920, STN4946, STN4972, STN5PF02V, STN6303, STN6562, STN7400, IRF9540N, STN8822, STN8822A, STN8882D, STP100N10F7, STP100N8F6, STP1013, STP105N3LL, STP10N105K5

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