All MOSFET. STN80T08 Datasheet

 

STN80T08 Datasheet and Replacement


   Type Designator: STN80T08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: TO-220-3L
 

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STN80T08 Datasheet (PDF)

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STN80T08

STN80T08 N Channel Enhancement Mode MOSFET 80.0A DESCRIPTION STN80T08 is used trench technology to provide excellent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION FEATURE TO220-3L 80V/40.0A, RDS(ON) = 8m (Typ.) @VGS = 10V Super high density cell design for extremely low RDS(ON) Exceptional on

Datasheet: STN4850 , STN4920 , STN4946 , STN4972 , STN5PF02V , STN6303 , STN6562 , STN7400 , IRF1010E , STN8822 , STN8822A , STN8882D , STP100N10F7 , STP100N8F6 , STP1013 , STP105N3LL , STP10N105K5 .

History: PA5D8JA | CHM2307GP | IXZ318N50 | BUK9K8R7-40E | P2204ND5G | AOB480L | DSKTJ05

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