All MOSFET. IXFH50N20 Datasheet

 

IXFH50N20 MOSFET. Datasheet pdf. Equivalent

Type Designator: IXFH50N20

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 300 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 50 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 190 nC

Maximum Drain-Source On-State Resistance (Rds): 0.045 Ohm

Package: TO247

IXFH50N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFH50N20 Datasheet (PDF)

1.1. ixfh42n20 ixfm42n20 ixfh58n20 ixfm58n20 ixft50n20 ixfh50n20 ixfm50n20 ixft58n20.pdf Size:104K _ixys

IXFH50N20
IXFH50N20

VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs 200 V 42 A 60mW IXFH/IXFM42N20 200 V 50 A 45mW IXFH/IXFM/IXFT50N20 200 V 58 A 40mW IXFH/IXFT58N20 N-Channel Enhancement Mode trr £ 200 ns High dv/dt, Low trr, HDMOSTM Family TO-247 AD (IXFH) (TAB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 200 V TO-268 (D3) Case Style VG

3.1. ixft50n50p3 ixfq50n50p3 ixfh50n50p3.pdf Size:139K _update

IXFH50N20
IXFH50N20

Polar3TM HiperFETTM VDSS = 500V IXFT50N50P3 ID25 = 50A Power MOSFET IXFQ50N50P3   RDS(on)    125m     IXFH50N50P3 N-Channel Enhancement Mode TO-268 (IXFT) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) TO-3P (IXFQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V G VDGR TJ = 25C to 150C, RGS = 1M 500 V D

3.2. ixfh50n60x ixfq50n60x ixft50n60x.pdf Size:184K _ixys

IXFH50N20
IXFH50N20

Preliminary Technical Information X-Class HiPerFETTM VDSS = 600V IXFT50N60X Power MOSFET ID25 = 50A IXFQ50N60X   RDS(on)    73m     IXFH50N60X N-Channel Enhancement Mode TO-268 (IXFT) Avalanche Rated Fast Intrinsic Diode G S D (Tab) TO-3P (IXFQ) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25C to 150C 600 V D VDGR TJ = 25C to 1

 3.3. ixft50n50p3 ixfq50n50p3 ixfh50n50p3.pdf Size:139K _ixys

IXFH50N20
IXFH50N20

Polar3TM HiperFETTM VDSS = 500V IXFT50N50P3 ID25 = 50A Power MOSFET IXFQ50N50P3   RDS(on)    125m     IXFH50N50P3 N-Channel Enhancement Mode TO-268 (IXFT) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) TO-3P (IXFQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V G VDGR TJ = 25C to 150C, RGS = 1M 500 V D

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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