All MOSFET. STP140N8F7 Datasheet

 

STP140N8F7 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STP140N8F7
   Marking Code: 140N8F7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 96 nC
   trⓘ - Rise Time: 51 nS
   Cossⓘ - Output Capacitance: 1195 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm
   Package: TO-220

 STP140N8F7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STP140N8F7 Datasheet (PDF)

 ..1. Size:582K  st
 stp140n8f7.pdf

STP140N8F7 STP140N8F7

STP140N8F7 N-channel 80 V, 3.5 m typ., 90 A STripFET F7 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTP140N8F7 80 V 4.3 m 90 A 200 W Among the lowest R on the market DS(on) Excellent figure of merit (FoM) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness Applications

 7.1. Size:539K  st
 stb140nf75-1 stb140nf75t4 stb140nf75 stp140nf75-1 stp140nf75.pdf

STP140N8F7 STP140N8F7

STP140NF75STB140NF75 - STB140NF75-1N-channel 75V - 0.0065 - 120A - D2PAK/I2/TO-220STripFET III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB140NF75 75V

 7.2. Size:481K  st
 stb140nf55 stb140nf55-1 stp140nf55.pdf

STP140N8F7 STP140N8F7

STB140NF55 - STB140NF55-1STP140NF55N-channel 55V - 0.0065 - 80A - D2PAK - I2PAK - TO-220STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) ID (1)STB140NF55 55V

 7.3. Size:256K  st
 stp140n6f7.pdf

STP140N8F7 STP140N8F7

STP140N6F7 N-channel 60 V, 0.0031 typ., 80 A STripFET F7 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTP140N6F7 60 V 0.0035 80 A 158 W Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications

 7.4. Size:517K  st
 stp140nf75.pdf

STP140N8F7 STP140N8F7

STP140NF75STB140NF75 - STB140NF75-1N-channel 75V - 0.0065 - 120A - D2PAK/I2/TO-220STripFET III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB140NF75 75V

 7.5. Size:260K  inchange semiconductor
 istp140n6f7.pdf

STP140N8F7 STP140N8F7

isc N-Channel MOSFET Transistor ISTP140N6F7FEATURESWith TO-220 packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

 7.6. Size:262K  inchange semiconductor
 stp140nf75.pdf

STP140N8F7 STP140N8F7

isc N-Channel MOSFET Transistor STP140NF75FEATURESDrain Current : I =120A@ T =25D CDrain Source Voltage: V =75V(Min)DSSStatic Drain-Source On-Resistance: R =7.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSmotor drive, DC-DC converter, power switchand solenoid drive.A

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: STP16NF06

 

 
Back to Top