Справочник MOSFET. STP140N8F7

 

STP140N8F7 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: STP140N8F7
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 200 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 90 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 51 ns
   Cossⓘ - Выходная емкость: 1195 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0043 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для STP140N8F7

 

 

STP140N8F7 Datasheet (PDF)

 ..1. Size:582K  st
 stp140n8f7.pdf

STP140N8F7 STP140N8F7

STP140N8F7 N-channel 80 V, 3.5 m typ., 90 A STripFET F7 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTP140N8F7 80 V 4.3 m 90 A 200 W Among the lowest R on the market DS(on) Excellent figure of merit (FoM) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness Applications

 7.1. Size:539K  st
 stb140nf75-1 stb140nf75t4 stb140nf75 stp140nf75-1 stp140nf75.pdf

STP140N8F7 STP140N8F7

STP140NF75STB140NF75 - STB140NF75-1N-channel 75V - 0.0065 - 120A - D2PAK/I2/TO-220STripFET III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB140NF75 75V

 7.2. Size:481K  st
 stb140nf55 stb140nf55-1 stp140nf55.pdf

STP140N8F7 STP140N8F7

STB140NF55 - STB140NF55-1STP140NF55N-channel 55V - 0.0065 - 80A - D2PAK - I2PAK - TO-220STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) ID (1)STB140NF55 55V

 7.3. Size:256K  st
 stp140n6f7.pdf

STP140N8F7 STP140N8F7

STP140N6F7 N-channel 60 V, 0.0031 typ., 80 A STripFET F7 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTP140N6F7 60 V 0.0035 80 A 158 W Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications

 7.4. Size:517K  st
 stp140nf75.pdf

STP140N8F7 STP140N8F7

STP140NF75STB140NF75 - STB140NF75-1N-channel 75V - 0.0065 - 120A - D2PAK/I2/TO-220STripFET III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB140NF75 75V

 7.5. Size:260K  inchange semiconductor
 istp140n6f7.pdf

STP140N8F7 STP140N8F7

isc N-Channel MOSFET Transistor ISTP140N6F7FEATURESWith TO-220 packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

 7.6. Size:262K  inchange semiconductor
 stp140nf75.pdf

STP140N8F7 STP140N8F7

isc N-Channel MOSFET Transistor STP140NF75FEATURESDrain Current : I =120A@ T =25D CDrain Source Voltage: V =75V(Min)DSSStatic Drain-Source On-Resistance: R =7.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSmotor drive, DC-DC converter, power switchand solenoid drive.A

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