STP1N105K3 MOSFET. Datasheet pdf. Equivalent
Type Designator: STP1N105K3
Marking Code: 1N105K3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1050 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 1.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 13 nC
trⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 15 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 11 Ohm
Package: TO-220
STP1N105K3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STP1N105K3 Datasheet (PDF)
stfw1n105k3 stp1n105k3.pdf
STF1N105K3, STFW1N105K3, STP1N105K3N-channel 1050 V, 8 typ., 1.4 A SuperMESH3 Power MOSFET in TO-220FP, TO-3PF and TO-220 packagesDatasheet production dataFeaturesTABRDS(on)Order codes VDS ID PTOT 111max32 3STF1N105K31220 W1STFW1N105K3 1050 V 11 1.4 A TO-220FPTO-3PFSTP1N105K3 60 W Gate charge minimized Extremely large avalanche pe
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: SSF7508
History: SSF7508
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918