STP1N105K3 Specs and Replacement
Type Designator: STP1N105K3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1050 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 15 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 11 Ohm
Package: TO-220
STP1N105K3 substitution
- MOSFET ⓘ Cross-Reference Search
STP1N105K3 datasheet
stfw1n105k3 stp1n105k3.pdf
STF1N105K3, STFW1N105K3, STP1N105K3 N-channel 1050 V, 8 typ., 1.4 A SuperMESH3 Power MOSFET in TO-220FP, TO-3PF and TO-220 packages Datasheet production data Features TAB RDS(on) Order codes VDS ID PTOT 1 1 1 max 3 2 3 STF1N105K3 1 2 20 W 1 STFW1N105K3 1050 V 11 1.4 A TO-220FP TO-3PF STP1N105K3 60 W Gate charge minimized Extremely large avalanche pe... See More ⇒
Detailed specifications: STP18N65M2, STP18N65M5, STP18NM60ND, STP190NF04, STP19N05L, STP19NB20, STP19NB20FP, STP19NM65N, IRF540N, STP20N20, STP20N65M5, STP20NE06L, STP20NE06LFP, STP20NM50FP, STP20NM60A, STP21NM50N, STP21NM60N
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