STP1N105K3 Datasheet and Replacement
Type Designator: STP1N105K3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1050 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 15 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 11 Ohm
Package: TO-220
STP1N105K3 substitution
STP1N105K3 Datasheet (PDF)
stfw1n105k3 stp1n105k3.pdf

STF1N105K3, STFW1N105K3, STP1N105K3N-channel 1050 V, 8 typ., 1.4 A SuperMESH3 Power MOSFET in TO-220FP, TO-3PF and TO-220 packagesDatasheet production dataFeaturesTABRDS(on)Order codes VDS ID PTOT 111max32 3STF1N105K31220 W1STFW1N105K3 1050 V 11 1.4 A TO-220FPTO-3PFSTP1N105K3 60 W Gate charge minimized Extremely large avalanche pe
Datasheet: STP18N65M2 , STP18N65M5 , STP18NM60ND , STP190NF04 , STP19N05L , STP19NB20 , STP19NB20FP , STP19NM65N , IRF540N , STP20N20 , STP20N65M5 , STP20NE06L , STP20NE06LFP , STP20NM50FP , STP20NM60A , STP21NM50N , STP21NM60N .
History: NCE6020A
Keywords - STP1N105K3 MOSFET datasheet
STP1N105K3 cross reference
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History: NCE6020A



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