STP20NE06L MOSFET. Datasheet pdf. Equivalent

   Type Designator: STP20NE06L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 14 nC
   trⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: TO-220

STP20NE06L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

STP20NE06L Datasheet (PDF)

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stp20ne06l.pdf

STP20NE06LSTP20NE06LFP N - CHANNEL 60V - 0.06 - 20A TO-220/TO-220FPSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP20NE06L 60 V

..2. Size:107K st
stp20ne06l stp20ne06lfp.pdf

STP20NE06LSTP20NE06LFP N - CHANNEL 60V - 0.06 - 20A TO-220/TO-220FPSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP20NE06L 60 V

..3. Size:1041K cn vbsemi
stp20ne06l.pdf

STP20NE06Lwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.024 at VGS = 10 V 5060 66 nC Available in Tape and Reel 0.028 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS D

0.1. Size:53K st
stp20ne06l-.pdf