STP20NE06L Datasheet and Replacement
Type Designator: STP20NE06L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 125 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: TO-220
STP20NE06L substitution
STP20NE06L Datasheet (PDF)
stp20ne06l.pdf
STP20NE06LSTP20NE06LFP N - CHANNEL 60V - 0.06 - 20A TO-220/TO-220FPSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP20NE06L 60 V
stp20ne06l stp20ne06lfp.pdf
STP20NE06LSTP20NE06LFP N - CHANNEL 60V - 0.06 - 20A TO-220/TO-220FPSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP20NE06L 60 V
stp20ne06l.pdf
STP20NE06Lwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.024 at VGS = 10 V 5060 66 nC Available in Tape and Reel 0.028 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS D
stp20ne06l-.pdf
STP20NE06LSTP20NE06LFP N - CHANNEL 60V - 0.07 - 20 A - TO-220/TO-220FPSTripFET POWER MOSFETPRELIMINARY DATATYPE V R IDSS DS(on) DSTP20NE06L 60 V
Datasheet: STP190NF04 , STP19N05L , STP19NB20 , STP19NB20FP , STP19NM65N , STP1N105K3 , STP20N20 , STP20N65M5 , IRF640 , STP20NE06LFP , STP20NM50FP , STP20NM60A , STP21NM50N , STP21NM60N , STP2301 , STP2305 , STP23NM60N .
History: MEE4294P-G | SSM85T03GH | 2SK750 | IRFS38N20D | SSM85T03GJ | IPP80N06S2-05 | NCEP6080AG
Keywords - STP20NE06L MOSFET datasheet
STP20NE06L cross reference
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History: MEE4294P-G | SSM85T03GH | 2SK750 | IRFS38N20D | SSM85T03GJ | IPP80N06S2-05 | NCEP6080AG
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