STP25N80K5 Datasheet and Replacement

STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5N-channel 800 V, 0.19 typ., 19.5 A MDmesh K5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABVDS @ RDS(on) Order code ID PTOTTJmax max3312STB25N80K5 250 W1D2PAKTO-220FPSTF25N80K5 40 WTAB800 V

STD25N10F7, STF25N10F7, STP25N10F7N-channel 100 V, 0.027 typ., 25 A, STripFET VII DeepGATE Power MOSFET in DPAK, TO-220FP and TO-220 packagesDatasheet - production dataFeaturesTABRDS(on) Order codes VDSS ID PTOTmax.(1)DPAKSTD25N10F7 100 V 0.035 25 A 40 WSTF25N10F7 100 V 0.035 19 A 25 WTABSTP25N10F7 100 V 0.035 25 A 50 W1. @ VGS = 10 V 33

STB25NM60Nx - STF25NM60NSTP25NM60N - STW25NM60NN-channel 600 V, 0.130 , 21 A, MDmesh II Power MOSFETTO-220, TO-220FP, I2PAK, D2PAK, TO-247FeaturesVDSS RDS(on) Type ID(@Tjmax) max332211STB25NM60N 650 V

STx25NM50NN-channel 500 V, 0.11 , 22 A MDmesh II Power MOSFETTO-220, TO-220FP, I2PAK, D2PAK, TO-247FeaturesVDSS RDS(on) Type ID(@Tjmax) max323121STB25NM50N 550 V

STP25N06STP25N06FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP25N06 60 V

STx25NM60NDN-channel 600 V, 0.13 , 21 A FDmesh II Power MOSFETD2PAK, I2PAK, TO-220FP, TO-220, TO-247FeaturesVDSS @ Type RDS(on) max IDTJMAX 33 13221STB25NM60ND 21 A 1D2PAKTO-220STI25NM60ND 21 ATO-220FPSTF25NM60ND 650 V 0.16 21 A(1)STP25NM60ND 21 ASTW25NM60ND 21 A1. Limited only by maximum temperature allowed323121 The worldwide

STB25NM60Nx - STF25NM60NSTP25NM60N - STW25NM60NN-channel 600 V, 0.130 , 21 A, MDmesh II Power MOSFETTO-220, TO-220FP, I2PAK, D2PAK, TO-247FeaturesVDSS RDS(on) Type ID(@Tjmax) max332211STB25NM60N 650 V

STP25NM50N - STF25NM50NSTB25NM50N/-1 - STW25NM50NN-CHANNEL 500V 0.11 - 22 A TO-220/FP/D/IPAK/TO-247SECOND GENERATION MDmesh MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS (@TjMAX) ID RDS(on)STB25NM50N-1 550V 22 A 0.140 STF25NM50N 550V 22 A(*) 0.140 332 2STP25NM50N 550V 22 A 0.140 11STW25NM50N 550V 22 A 0.140 TO-220IPAKSTB25N

isc N-Channel MOSFET Transistor STP25N10F7FEATURESDrain Current I = 25A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.035(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONThese devices utilize the 7th generation of design rules of S