STP36N55M5 Specs and Replacement

Type Designator: STP36N55M5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 190 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 33 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: TO-220

STP36N55M5 substitution

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STP36N55M5 datasheet

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 stp36n55m5 stw36n55m5.pdf pdf_icon

STP36N55M5

STP36N55M5 STW36N55M5 N-channel 550 V, 0.06 typ., 33 A MDmesh V Power MOSFET in TO-220 and TO-247 packages Datasheet production data Features VDSS @ RDS(on) Order codes ID TJmax max TAB STP36N55M5 600 V ... See More ⇒

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 stp36nf06l stb36nf06l.pdf pdf_icon

STP36N55M5

STP36NF06L STB36NF06L N-channel 60V - 0.032 - 30A - TO-220 - D2PAK STripFET II Power MOSFET General features Type VDSS RDS(on) ID STP36NF06L 60V ... See More ⇒

 8.2. Size:396K  st
 stp36n05l.pdf pdf_icon

STP36N55M5

STP36N05L STP36N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP36N05L 50 V ... See More ⇒

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 stp36n06.pdf pdf_icon

STP36N55M5

STP36N06 STP36N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP36N06 60 V ... See More ⇒

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Detailed specifications: STP33N65M2, STP3401, STP3401A, STP3407, STP3467, STP3481, STP34N65M5, STP360N4F6, IRF830, STP36NE06, STP36NE06FP, STP36NF06FP, STP38N65M5, STP3HNK90Z, STP3N80K5, STP3NA50, STP3NB100

Keywords - STP36N55M5 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs