All MOSFET. STP36N55M5 Datasheet

 

STP36N55M5 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STP36N55M5
   Marking Code: 36N55M5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 190 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 33 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 62 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: TO-220

 STP36N55M5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STP36N55M5 Datasheet (PDF)

 ..1. Size:759K  st
stp36n55m5 stw36n55m5.pdf

STP36N55M5 STP36N55M5

STP36N55M5 STW36N55M5N-channel 550 V, 0.06 typ., 33 A MDmesh V Power MOSFET in TO-220 and TO-247 packagesDatasheet production dataFeaturesVDSS @ RDS(on) Order codes IDTJmax maxTABSTP36N55M5600 V

 8.1. Size:444K  st
stp36nf06l stb36nf06l.pdf

STP36N55M5 STP36N55M5

STP36NF06LSTB36NF06LN-channel 60V - 0.032 - 30A - TO-220 - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP36NF06L 60V

 8.2. Size:396K  st
stp36n05l.pdf

STP36N55M5 STP36N55M5

STP36N05LSTP36N05LFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP36N05L 50 V

 8.3. Size:414K  st
stp36n06.pdf

STP36N55M5 STP36N55M5

STP36N06STP36N06FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP36N06 60 V

 8.4. Size:229K  st
stp36ne06 stp36ne06fp.pdf

STP36N55M5 STP36N55M5

STP36NE06STP36NE06FPN - CHANNEL 60V - 0.032 - 36A - TO-220/TO-220FPSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP36NE06 60 V

 8.5. Size:330K  st
stp36nf06 stp36nf06fp.pdf

STP36N55M5 STP36N55M5

STP36NF06STP36NF06FPN-channel 60V - 0.032 - 30A - TO-220/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP36NF06 60V

 8.6. Size:349K  st
stp36ne06.pdf

STP36N55M5 STP36N55M5

STP36NE06STP36NE06FPN - CHANNEL 60V - 0.032 - 36A - TO-220/TO-220FPSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP36NE06 60 V

 8.7. Size:401K  st
stp36n06l.pdf

STP36N55M5 STP36N55M5

STP36N06LSTP36N06LFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP36N05L 60 V

 8.8. Size:112K  st
stp36ne06-.pdf

STP36N55M5 STP36N55M5

STP36NE06STP36NE06FP N - CHANNEL 60V - 0.032 - 36A - TO-220/TO-220FPSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP36NE06 60 V

 8.9. Size:204K  st
stp36n05.pdf

STP36N55M5 STP36N55M5

STP36N05LSTP36N05LFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP36N05L 50 V

 8.10. Size:102K  st
stp36nf03l.pdf

STP36N55M5 STP36N55M5

STP36NF03LN-CHANNEL 30V - 0.015 - 40A TO-220LOW GATE CHARGE STripFETII POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP36NF03L 30 V

 8.11. Size:415K  st
stp36n60m6 stw36n60m6.pdf

STP36N55M5 STP36N55M5

STP36N60M6, STW36N60M6N-channel 600 V, 85 m typ., 30 A MDmesh M6 Power MOSFETs in TO-220 and TO-247 packages Datasheet - production data Features TABOrder code V R max. I DS DS(on) DSTP36N60M6 600 V 99 m 30 A STW36N60M6 33 Reduced switching losses 221 Lower R x area vs previous generation DS(on)1 Low gate input resistance 100% avalanche tested

 8.12. Size:328K  st
stp36nf06fp.pdf

STP36N55M5 STP36N55M5

STP36NF06STP36NF06FPN-channel 60V - 0.032 - 30A - TO-220/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP36NF06 60V

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IRFR540ZTRPBF | 2SK3748 | IRFD224 | SL2307

 

 
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