All MOSFET. STP413D Datasheet

 

STP413D MOSFET. Datasheet pdf. Equivalent


   Type Designator: STP413D
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16.5 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 69 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
   Package: TO-251 TO-252

 STP413D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STP413D Datasheet (PDF)

 ..1. Size:674K  stansontech
 stp413d.pdf

STP413D STP413D

STP413D P Channel Enhancement Mode MOSFET -12.0A DESCRIPTION STP413D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP413D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been o

 ..2. Size:890K  cn vbsemi
 stp413d.pdf

STP413D STP413D

STP413Dwww.VBsemi.twP-Channel 4 0 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -40 Package with low thermal resistanceRDS(on) () at VGS = -10 V 0.012 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.015ID (A) -50Configuration SingleTO-252SGDDG SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unle

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