All MOSFET. IXFH80N20Q Datasheet

 

IXFH80N20Q MOSFET. Datasheet pdf. Equivalent

Type Designator: IXFH80N20Q

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 360 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 80 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 180 nC

Drain-Source Capacitance (Cd): 4600 pF

Maximum Drain-Source On-State Resistance (Rds): 0.03 Ohm

Package: TO247

IXFH80N20Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFH80N20Q Datasheet (PDF)

1.1. ixfh80n20q ixfk80n20q ixft80n20q.pdf Size:70K _ixys

IXFH80N20Q
IXFH80N20Q

IXFH 80N20Q HiPerFETTM VDSS = 200 V IXFK 80N20Q Power MOSFETs ID25 = 80 A IXFT 80N20Q Q-Class RDS(on) = 28 mW trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 200 V (TAB) VGS Continuous ±20 V VGSM Transi

3.1. ixfh80n10q ixft80n10q.pdf Size:52K _ixys

IXFH80N20Q
IXFH80N20Q

IXFH 80N10Q VDSS = 100 V HiPerFETTM IXFT 80N10Q ID25 = 80 A Power MOSFETs RDS(on) = 15 mW Q-Class trr £ 200ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary data TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 100 V VGS Continuous ±20 V VGSM Trans

3.2. ixfh80n085 ixft80n085.pdf Size:54K _ixys

IXFH80N20Q
IXFH80N20Q

IXFH 80N085 VDSS = 85 V HiPerFETTM IXFT 80N085 ID25 = 80 A Power MOSFETs RDS(on) = 9 mW N-Channel Enhancement Mode trr £ 200 ns Avalanche Rated, High dv/dt Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C85 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 85 V VGS Continuous ±20 V VGSM Transient ±30 V (TAB) ID25 TC = 25°C80 A IL

 3.3. ixfh80n65x2.pdf Size:114K _ixys

IXFH80N20Q
IXFH80N20Q

Advance Technical Information X2-Class HiPerFETTM VDSS = 650V IXFH80N65X2 Power MOSFET ID25 = 80A   RDS(on)    40m     N-Channel Enhancement Mode Avalanche Rated TO-247 Fast Intrinsic Diode G D S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 650 V G = Gate D = Drain VDGR TJ = 25C to 150C, RGS = 1M 650 V S =

3.4. ixfh80n65x2.pdf Size:261K _inchange_semiconductor

IXFH80N20Q
IXFH80N20Q

isc N-Channel MOSFET Transistor IXFH80N65X2 ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS V G

Datasheet: IXFH70N15 , IXFH75N10 , IXFH75N10Q , IXFH76N07-11 , IXFH76N07-12 , IXFH7N80 , IXFH7N90 , IXFH80N10Q , IRFP460 , IXFH8N80 , IXFH9N80 , IXFJ13N50 , IXFJ32N50Q , IXFJ40N30 , IXFK100N10 , IXFK100N25 , IXFK110N07 .

 

 
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