STP4803 Datasheet and Replacement
Type Designator: STP4803
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
Package: SOP-8
STP4803 substitution
STP4803 Datasheet (PDF)
stp4803.pdf

STP4803STP4803STP4803STP4803Dual P Channel Enhancement Mode MOSFET-5.2ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONSTP4803 is the dual P-Channel logic enhancement mode power field effect transistorwhich is produced using high cell density, DMOS trench technology. This high densityprocess is especially tailored to minimize on-state resistance. These devices areparticula
Datasheet: STP4407A , STP4435 , STP4435A , STP45N10F7 , STP45N65M5 , STP45NE06 , STP45NE06FP , STP46NF30 , IRF630 , STP4925 , STP4931 , STP4953 , STP4953A , STP4N80K5 , STP4NA90 , STP4NA90FI , STP4NB100 .
History: NCE3080KA
Keywords - STP4803 MOSFET datasheet
STP4803 cross reference
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STP4803 substitution
STP4803 replacement
History: NCE3080KA



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