STP4803 Specs and Replacement
Type Designator: STP4803
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 120 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
Package: SOP-8
STP4803 substitution
- MOSFET ⓘ Cross-Reference Search
STP4803 datasheet
stp4803.pdf
STP4803 STP4803 STP4803 STP4803 Dual P Channel Enhancement Mode MOSFET -5.2A DESCRIPTION DESCRIPTION DESCRIPTION DESCRIPTION STP4803 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particula... See More ⇒
Detailed specifications: STP4407A, STP4435, STP4435A, STP45N10F7, STP45N65M5, STP45NE06, STP45NE06FP, STP46NF30, IRF640N, STP4925, STP4931, STP4953, STP4953A, STP4N80K5, STP4NA90, STP4NA90FI, STP4NB100
Keywords - STP4803 MOSFET specs
STP4803 cross reference
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