STP4953 Datasheet and Replacement. Cross Reference Search

STP4953 Datasheet (PDF)

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STP4953 Dual P Channel Enhancement Mode MOSFET -5.2A DESCRIPTION STP4953 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD backli

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STP4953A -30V Dual P-Channel Fast Switching MOSFETsDESCRIPTIONFEATUREThe STP4953A is the Dual P-Channel logic -30V/-5.3A, RDS(ON) =46m(typ.)@VGS =-10V enhancement mode power field effect transistor is -30V/-3.6A, RDS(ON) =75m(typ.)@VGS =-4.5V produced using high cell density. advanced trench Super high density cell design for extremely low technology

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STP4925 Dual P Channel Enhancement Mode MOSFET -7.2A DESCRIPTION STP4925 is the dual P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power

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STP4931STP4931STP4931STP4931Dual P Channel Enhancement Mode MOSFET-8.5ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONSTP4931 is the dual P-Channel logic enhancement mode power field effect transistorsare produced using high cell density, DMOS trench technology. This high densityprocess is especially tailored to minimize on-state resistance. These devices areparticularly

Datasheet: STP45N10F7 , STP45N65M5 , STP45NE06 , STP45NE06FP , STP46NF30 , STP4803 , STP4925 , STP4931 , AON6414A , STP4953A , STP4N80K5 , STP4NA90 , STP4NA90FI , STP4NB100 , STP4NB50 , STP4NB80 , STP4NM60 .