STP4NA90 Specs and Replacement

Type Designator: STP4NA90

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm

Package: TO-220

STP4NA90 substitution

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STP4NA90 datasheet

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STP4NA90

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STP4NA90

STP4NA80 STP4NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP4NA80 800 V ... See More ⇒

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STP4NA90

STP4NA60FP N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(on) D STP4NA60FP 600 V ... See More ⇒

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STP4NA90

STP4NA80 STP4NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP4NA80 800 V ... See More ⇒

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Detailed specifications: STP45NE06FP, STP46NF30, STP4803, STP4925, STP4931, STP4953, STP4953A, STP4N80K5, AON6414A, STP4NA90FI, STP4NB100, STP4NB50, STP4NB80, STP4NM60, STP50NE08, STP50NE10, STP55NF03L

Keywords - STP4NA90 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.