STP4NB100 MOSFET. Datasheet pdf. Equivalent
Type Designator: STP4NB100
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 1000 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 3.8 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 32 nC
Rise Time (tr): 9 nS
Drain-Source Capacitance (Cd): 117 pF
Maximum Drain-Source On-State Resistance (Rds): 4.4 Ohm
Package: TO-220
STP4NB100 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STP4NB100 Datasheet (PDF)
1.1. stp4nb100.pdf 
Size:210K _upd
STP4NB100 STP4NB100FP ® N - CHANNEL 1000V - 4Ω - 3.8A - TO-220/TO-220FP PowerMESH MOSFET TYPE V R I DSS DS(on) D STP4NB100 1000 V < 4.4 Ω 3.8 A STP4NB100FP 1000 V < 4.4 Ω 3.8 A TYPICAL R = 4 Ω DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES 3 3 GATE CHARGE MINIMIZED 2 2 1 1 DESCRIPTION Using the latest high vo
1.2. stp4nb100-.pdf Size:53K _st
STP4NB100 STP4NB100FP ? N - CHANNEL 1000V - 4? - 3.8A - TO-220/TO-220FP PowerMESH? MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP4NB100 1000 V < 4.4 ? 3.8 A STP4NB100FP 1000 V < 4.4 ? 2.1 A TYPICAL R =4 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 2 DESCRIPTION 1 1 Using the latest high voltage
1.3. stp4nb100.pdf Size:302K _st
STP4NB100 STP4NB100FP N - CHANNEL 1000V - 4? - 3.8A - TO-220/TO-220FP PowerMESH? MOSFET TYPE V R I DSS DS(on) D STP4NB100 1000 V < 4.4 ? 3.8 A STP4NB100FP 1000 V < 4.4 ? 3.8 A TYPICAL R = 4 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES 3 3 GATE CHARGE MINIMIZED 2 2 1 1 DESCRIPTION Using the latest high voltage MESH OVE
Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .
