STP4NB100 MOSFET Datasheet: N-Ch, 1000V, 3.8A. Full specification with pinout and replacement list

STP4NB100 Specs and Replacement

   Type Designator: STP4NB100
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 117 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm
   Package: TO-220

STP4NB100 substitution

- MOSFET ⓘ Cross-Reference Search

STP4NB100 datasheet

..1. Size:210K st
stp4nb100.pdf pdf_icon

STP4NB100 STP4NB100FP N - CHANNEL 1000V - 4 - 3.8A - TO-220/TO-220FP PowerMESH MOSFET TYPE V R I DSS DS(on) D STP4NB100 1000 V ... See More ⇒

0.1. Size:53K st
stp4nb100-.pdf pdf_icon

STP4NB100 STP4NB100FP N - CHANNEL 1000V - 4 - 3.8A - TO-220/TO-220FP PowerMESH MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP4NB100 1000 V ... See More ⇒

8.1. Size:82K st
stp4nb80-.pdf pdf_icon

STP4NB80 STP4NB80FP N - CHANNEL 800V - 3 - 4A - TO-220/TO-220FP PowerMESH MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP4NB80 800 V 3.3 4 A STP4NB80FP 800 V 3.3 4 A TYPICAL R = 3 DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 2 DESCRIPTION 1 1 Using the latest high voltage ... See More ⇒

8.2. Size:246K st
stp4nb80.pdf pdf_icon

STP4NB80 STP4NB80FP N - CHANNEL 800V - 3 - 4A - TO-220/TO-220FP PowerMESH MOSFET TYPE VDSS RDS(on) ID STP4NB80 800 V 3.3 4 A STP4NB80FP 800 V 3.3 4 A TYPICAL R = 3 DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 2 DESCRIPTION 1 1 Using the latest high voltage MESH OVERLAY p... See More ⇒