STP50NE08 Specs and Replacement

Type Designator: STP50NE08

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 95 nS

Cossⓘ - Output Capacitance: 480 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm

Package: TO-220

STP50NE08 substitution

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STP50NE08 datasheet

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 stp50ne08.pdf pdf_icon

STP50NE08

STP50NE08 N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZE " POWER MOSFET TYPE VDSS RDS(on) ID STP50NE08 80 V ... See More ⇒

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 stp50ne10l.pdf pdf_icon

STP50NE08

STP50NE10L N - CHANNEL 100V - 0.020 - 50A TO-220 STripFET POWER MOSFET TYPE VDSS RDS(on) ID STP50NE10L 100 V ... See More ⇒

 7.2. Size:256K  st
 stp50ne10.pdf pdf_icon

STP50NE08

STP50NE10 N-channel 100V - 0.021 - 50A TO-220 STripFET Power MOSFET General features Type VDSS RDS(on) ID STP50NE10 100V ... See More ⇒

 7.3. Size:86K  st
 stp50ne10--.pdf pdf_icon

STP50NE08

STP50NE10 N - CHANNEL 100V - 0.021 - 50A - D2PAK STripFET POWER MOSFET TYPE VDSS RDS(on) ID STP50NE10 100 V ... See More ⇒

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Detailed specifications: STP4953A, STP4N80K5, STP4NA90, STP4NA90FI, STP4NB100, STP4NB50, STP4NB80, STP4NM60, IRFP250N, STP50NE10, STP55NF03L, STP55NF06FP, STP57N65M5, STP5N105K5, STP5N120, STP5N60M2, STP5N95K5

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