STP57N65M5 Specs and Replacement

Type Designator: STP57N65M5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 42 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.063 Ohm

Package: TO-220

STP57N65M5 substitution

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STP57N65M5 datasheet

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 stb57n65m5 stf57n65m5 sti57n65m5 stp57n65m5.pdf pdf_icon

STP57N65M5

STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5 N-channel 650 V, 0.056 typ., 42 A MDmesh V Power MOSFET in I PAK, TO-220, TO-220FP and D PAK packages Datasheet production data Features TAB VDSS @ RDS(on) Order codes ID TJmax max 3 1 3 STB57N65M5 2 1 D PAK STF57N65M5 710 V ... See More ⇒

Detailed specifications: STP4NB100, STP4NB50, STP4NB80, STP4NM60, STP50NE08, STP50NE10, STP55NF03L, STP55NF06FP, 2SK3878, STP5N105K5, STP5N120, STP5N60M2, STP5N95K5, STP5NB40, STP5NB40FP, STP5NB60, STP5NK40Z

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