All MOSFET. IXFJ13N50 Datasheet

 

IXFJ13N50 Datasheet and Replacement


   Type Designator: IXFJ13N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO268
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IXFJ13N50 Datasheet (PDF)

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IXFJ13N50

HiPerFETTM IXFJ 13N50 VDSS = 500 VPower MOSFETs ID (cont) = 13 ARDS(on) = 0.4 WN-Channel Enhancement Modetrr 250 nsHigh dv/dt, Low trr, HDMOSTM FamilySymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VGVDGR TJ = 25C to 150C; RGS = 1 MW 500 VDVGS Continuous 20 VS(TAB)VGSM Transient 30 VID25 TC = 25C13 A G = Gate, D = Drain,S = So

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: CHM85A3PAGP | ALD1103DB | SML100L16 | SQ9407EY-T1 | TK7P65W | SFFX054Z

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