All MOSFET. IXFJ13N50 Datasheet

 

IXFJ13N50 Datasheet and Replacement


   Type Designator: IXFJ13N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO268
 

 IXFJ13N50 substitution

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IXFJ13N50 Datasheet (PDF)

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IXFJ13N50

HiPerFETTM IXFJ 13N50 VDSS = 500 VPower MOSFETs ID (cont) = 13 ARDS(on) = 0.4 WN-Channel Enhancement Modetrr 250 nsHigh dv/dt, Low trr, HDMOSTM FamilySymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VGVDGR TJ = 25C to 150C; RGS = 1 MW 500 VDVGS Continuous 20 VS(TAB)VGSM Transient 30 VID25 TC = 25C13 A G = Gate, D = Drain,S = So

Datasheet: IXFH76N07-11 , IXFH76N07-12 , IXFH7N80 , IXFH7N90 , IXFH80N10Q , IXFH80N20Q , IXFH8N80 , IXFH9N80 , IRF630 , IXFJ32N50Q , IXFJ40N30 , IXFK100N10 , IXFK100N25 , IXFK110N07 , IXFK110N20 , IXFK120N20 , IXFK150N10 .

History: ECH8315

Keywords - IXFJ13N50 MOSFET datasheet

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