STP60N06-14 Datasheet and Replacement
Type Designator: STP60N06-14
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 180 nS
Cossⓘ - Output Capacitance: 950 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: TO-220
STP60N06-14 substitution
STP60N06-14 Datasheet (PDF)
stp60n05-14 stp60n06-14.pdf
STP60N05-14STP60N06-14N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP60N05-14 50 V
stp60n06-14.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP60N06-14FEATURESWith low gate drive requirementsEasy to driveHigh current capability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSolenold and relay dirversDC-DC convertersAutomotive environmentABSOLUTE MAXIMUM RATINGS(T =25
stp60n05-16 stp60n06-16.pdf
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stp60n05 stp60n06.pdf
STP60N05-14STP60N06-14N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP60N05-14 50 V
Datasheet: STP5NK40Z , STP5NK40ZFP , STP5NK50ZFP , STP5NK80ZFP , STP5NK90Z , STP601D , STP607D , STP60N05-14 , 4435 , STP60NE06-16 , STP60NE06-16FP , STP60NE06L-16 , STP60NE06L-16FP , STP60NF06LFP , STP60NH2LL , STP6308 , STP6506 .
History: SQM120N06-3M5L | STL24N60M2 | SWB086R68E7T | 2SK4113 | AP4953 | BL12N70-A | STP22NF03L
Keywords - STP60N06-14 MOSFET datasheet
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History: SQM120N06-3M5L | STL24N60M2 | SWB086R68E7T | 2SK4113 | AP4953 | BL12N70-A | STP22NF03L
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