STP60N06-14 Datasheet and Replacement
Type Designator: STP60N06-14
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 180 nS
Cossⓘ - Output Capacitance: 950 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: TO-220
- MOSFET Cross-Reference Search
STP60N06-14 Datasheet (PDF)
stp60n05-14 stp60n06-14.pdf
STP60N05-14STP60N06-14N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP60N05-14 50 V
stp60n06-14.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP60N06-14FEATURESWith low gate drive requirementsEasy to driveHigh current capability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSolenold and relay dirversDC-DC convertersAutomotive environmentABSOLUTE MAXIMUM RATINGS(T =25
stp60n05-16 stp60n06-16.pdf
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stp60n05 stp60n06.pdf
STP60N05-14STP60N06-14N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP60N05-14 50 V
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: SWD80N04V | CS20N50ANH | DMNH10H028SCT | BLF7G15LS-200 | AO7800 | P2610ADG | IRLS4030
Keywords - STP60N06-14 MOSFET datasheet
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History: SWD80N04V | CS20N50ANH | DMNH10H028SCT | BLF7G15LS-200 | AO7800 | P2610ADG | IRLS4030
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