IXFJ32N50Q PDF and Equivalents Search

 

IXFJ32N50Q Specs and Replacement

Type Designator: IXFJ32N50Q

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 360 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 32 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 42 nS

Cossⓘ - Output Capacitance: 640 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: TO268

IXFJ32N50Q substitution

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IXFJ32N50Q datasheet

 ..1. Size:89K  ixys
 ixfj32n50q.pdf pdf_icon

IXFJ32N50Q

VDSS = 500 V IXFJ 32N50Q HiPerFETTM ID(cont) = 32 A Power MOSFETs RDS(on) = 0.15 W Q-Class trr ... See More ⇒

Detailed specifications: IXFH76N07-12 , IXFH7N80 , IXFH7N90 , IXFH80N10Q , IXFH80N20Q , IXFH8N80 , IXFH9N80 , IXFJ13N50 , IRFP260N , IXFJ40N30 , IXFK100N10 , IXFK100N25 , IXFK110N07 , IXFK110N20 , IXFK120N20 , IXFK150N10 , IXFK150N15 .

Keywords - IXFJ32N50Q MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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