IXFJ32N50Q Datasheet and Replacement
Type Designator: IXFJ32N50Q
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 360 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 32 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 640 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: TO268
IXFJ32N50Q substitution
IXFJ32N50Q Datasheet (PDF)
ixfj32n50q.pdf
VDSS = 500 VIXFJ 32N50QHiPerFETTMID(cont) = 32 APower MOSFETsRDS(on) = 0.15 WQ-Classtrr
Datasheet: IXFH76N07-12 , IXFH7N80 , IXFH7N90 , IXFH80N10Q , IXFH80N20Q , IXFH8N80 , IXFH9N80 , IXFJ13N50 , 10N60 , IXFJ40N30 , IXFK100N10 , IXFK100N25 , IXFK110N07 , IXFK110N20 , IXFK120N20 , IXFK150N10 , IXFK150N15 .
History: IXFH80N10Q
Keywords - IXFJ32N50Q MOSFET datasheet
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History: IXFH80N10Q
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