All MOSFET. STP6308 Datasheet

 

STP6308 Datasheet and Replacement


   Type Designator: STP6308
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
   Package: SOT-363
 

 STP6308 substitution

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STP6308 Datasheet (PDF)

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STP6308

STP6308STP6308STP6308STP6308Dual P Channel Enhancement Mode MOSFET-1.0ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONSTP6308 is the dual P-Channel enhancement mode power field effect transistor whichis produced using high cell density, DMOS trench technology. This high density processis especially tailored to minimize on-state resistance and provide superior switchingper

Datasheet: STP60N05-14 , STP60N06-14 , STP60NE06-16 , STP60NE06-16FP , STP60NE06L-16 , STP60NE06L-16FP , STP60NF06LFP , STP60NH2LL , AON7506 , STP6506 , STP6621 , STP6623 , STP6635GH , STP6N60M2 , STP6N65M2 , STP6N80K5 , STP6NB90 .

History: STP6506 | STP22NS25Z | PSMN9R5-100XS | VBQA1606 | STP8NK85Z

Keywords - STP6308 MOSFET datasheet

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