IXFJ40N30 Datasheet and Replacement
Type Designator: IXFJ40N30
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 177 nC
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 745 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: TO268
IXFJ40N30 substitution
IXFJ40N30 Datasheet (PDF)
..1. Size:33K ixys
ixfj40n30.pdf
ixfj40n30.pdf
HiPerFETTMIXFJ 40N30 VDSS = 300 VPower MOSFETs ID25 = 40 ARDS(on)= 80 mWtrr
Datasheet: IXFH7N80 , IXFH7N90 , IXFH80N10Q , IXFH80N20Q , IXFH8N80 , IXFH9N80 , IXFJ13N50 , IXFJ32N50Q , AON6414A , IXFK100N10 , IXFK100N25 , IXFK110N07 , IXFK110N20 , IXFK120N20 , IXFK150N10 , IXFK150N15 , IXFK170N10 .
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