IXFJ40N30 Specs and Replacement
Type Designator: IXFJ40N30
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 745 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: TO268
IXFJ40N30 substitution
- MOSFET ⓘ Cross-Reference Search
IXFJ40N30 datasheet
ixfj40n30.pdf
HiPerFETTM IXFJ 40N30 VDSS = 300 V Power MOSFETs ID25 = 40 A RDS(on)= 80 mW trr ... See More ⇒
Detailed specifications: IXFH7N80 , IXFH7N90 , IXFH80N10Q , IXFH80N20Q , IXFH8N80 , IXFH9N80 , IXFJ13N50 , IXFJ32N50Q , AO3400 , IXFK100N10 , IXFK100N25 , IXFK110N07 , IXFK110N20 , IXFK120N20 , IXFK150N10 , IXFK150N15 , IXFK170N10 .
Keywords - IXFJ40N30 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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