STP6NB90
MOSFET. Datasheet pdf. Equivalent
Type Designator: STP6NB90
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 135
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 5.8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 40
nC
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 160
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2
Ohm
Package:
TO-220
STP6NB90
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STP6NB90
Datasheet (PDF)
..1. Size:220K st
stp6nb90.pdf
STP6NB90STP6NB90FPN - CHANNEL 900V - 1.7 - 5.8A - TO-220/TO-220FPPowerMESH MOSFETTYPE VDSS RDS(on) IDSTP6NB90 900 V
..2. Size:333K st
stp6nb90 fp.pdf
STP6NB90STP6NB90FPN - CHANNEL 900V - 1.7 - 5.8A - TO-220/TO-220FPPowerMESH MOSFETTYPE VDSS RDS(on) IDSTP6NB90 900 V
0.1. Size:340K st
stp6nb90-fp.pdf
STP6NB90STP6NB90FPN - CHANNEL 900V - 1.7 - 5.8A - TO-220/TO-220FPPowerMESH MOSFETTYPE VDSS RDS(on) IDSTP6NB90 900 V
8.1. Size:365K st
stp6nb80.pdf
STP6NB80STP6NB80FPN-CHANNEL 800V - 1.6 - 5.7A TO-220/TO-220FPPowerMesh MOSFETTYPE VDSS RDS(on) IDSTP6NB80 800 V
8.2. Size:322K st
stp6nb25.pdf
STP6NB25STP6NB25FPN-CHANNEL 250V - 0.9 - 5A TO-220/TO-220FPPowerMesh MOSFETTYPE VDSS RDS(on) IDSTP6NB25 250 V
8.3. Size:326K st
stp6nb50.pdf
STP6NB50STP6NB50FPN - CHANNEL ENHANCEMENT MODEPowerMESH MOSFETTYPE VDSS RDS(on) IDSTP6NB50 500 V
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