STP6NC60 MOSFET. Datasheet pdf. Equivalent
Type Designator: STP6NC60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 35 nC
trⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 145 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO-220
STP6NC60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STP6NC60 Datasheet (PDF)
stp6nc60.pdf
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STP6NC60 - STP6NC60FPSTB6NC60-1N-CHANNEL 600V - 1 - 6A TO-220/TO-220FP/I2PAKPowerMESHII MOSFETTYPE VDSS RDS(on) IDSTP(B)6NC60(-1) 600 V
stp6nc60-fp--1.pdf
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STP6NC60 - STP6NC60FPSTB6NC60-1N-CHANNEL 600V - 1 - 6A TO-220/TO-220FP/I2PAKPowerMESHII MOSFETTYPE VDSS RDS(on) IDSTP(B)6NC60(-1) 600 V
stb6nc80z stp6nc80z.pdf
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STP6NC80Z - STP6NC80ZFPSTB6NC80Z - STB6NC80Z-1N-CHANNEL 800V - 1.5 - 5.4A TO-220/FP/DPAK/IPAKZener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTP6NC80Z/FP 800V
stp6nc90z.pdf
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STP6NC90Z - STP6NC90ZFPSTB6NC90Z - STB6NC90Z-1N-CHANNEL 900V - 1.55 - 5.4A TO-220/FP/DPAK/IPAKZener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTP6NC90Z 900 V
stp6nc80z.pdf
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STP6NC80Z - STP6NC80ZFPSTB6NC80Z - STB6NC80Z-1N-CHANNEL 800V - 1.5 - 5.4A TO-220/FP/DPAK/IPAKZener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTP6NC80Z/FP 800V
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
![STP6NC60](https://alltransistors.com/images/us.png)
![STP6NC60](https://alltransistors.com/images/es.png)
![STP6NC60](https://alltransistors.com/images/ru.png)
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