All MOSFET. STP7401 Datasheet

 

STP7401 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STP7401
   Marking Code: 01YW
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 2.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5.8 nC
   trⓘ - Rise Time: 3.9 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm
   Package: SOT-323

 STP7401 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STP7401 Datasheet (PDF)

 ..1. Size:456K  stansontech
 stp7401.pdf

STP7401 STP7401

STP7401 P Channel Enhancement Mode MOSFET -2.8A DESCRIPTION STP7401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and not

 8.1. Size:163K  semtron
 stp7407.pdf

STP7401 STP7401

STP7407 -20V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STP7407 is the P-Channel logic -20V/-3.4A, RDS(ON) =88m(typ.)@VGS =-4.5V enhancement mode power field effect transistor is -20V/-2.4A, RDS(ON) =110m(typ.)@VGS =-2.5V produced using high cell density. advanced trench -20V/-1.7A, RDS(ON) =150m(typ.)@VGS =-1.8V technology to provide excellen

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: 3N209

 

 
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