STP7401 MOSFET. Datasheet pdf. Equivalent
Type Designator: STP7401
Marking Code: 01YW
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 2.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 5.8 nC
trⓘ - Rise Time: 3.9 nS
Cossⓘ - Output Capacitance: 55 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm
Package: SOT-323
STP7401 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STP7401 Datasheet (PDF)
stp7401.pdf
STP7401 P Channel Enhancement Mode MOSFET -2.8A DESCRIPTION STP7401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and not
stp7407.pdf
STP7407 -20V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STP7407 is the P-Channel logic -20V/-3.4A, RDS(ON) =88m(typ.)@VGS =-4.5V enhancement mode power field effect transistor is -20V/-2.4A, RDS(ON) =110m(typ.)@VGS =-2.5V produced using high cell density. advanced trench -20V/-1.7A, RDS(ON) =150m(typ.)@VGS =-1.8V technology to provide excellen
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