All MOSFET. STP7401 Datasheet

 

STP7401 Datasheet and Replacement


   Type Designator: STP7401
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 2.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.9 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm
   Package: SOT-323
 

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STP7401 Datasheet (PDF)

 ..1. Size:456K  stansontech
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STP7401

STP7401 P Channel Enhancement Mode MOSFET -2.8A DESCRIPTION STP7401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and not

 8.1. Size:163K  semtron
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STP7401

STP7407 -20V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STP7407 is the P-Channel logic -20V/-3.4A, RDS(ON) =88m(typ.)@VGS =-4.5V enhancement mode power field effect transistor is -20V/-2.4A, RDS(ON) =110m(typ.)@VGS =-2.5V produced using high cell density. advanced trench -20V/-1.7A, RDS(ON) =150m(typ.)@VGS =-1.8V technology to provide excellen

Datasheet: STP6N80K5 , STP6NB90 , STP6NC60 , STP6NK60ZFP , STP6NK70Z , STP6NK90ZFP , STP6NM60N , STP6NS25 , RU6888R , STP7407 , STP75N20 , STP75N75F4 , STP75NF75FP , STP77N6F6 , STP7N105K5 , STP7N60M2 , STP7N65M2 .

Keywords - STP7401 MOSFET datasheet

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