STP7NB60 Datasheet. Specs and Replacement

Type Designator: STP7NB60  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 165 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO-220

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STP7NB60 substitution

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STP7NB60 datasheet

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 stp7nb60.pdf pdf_icon

STP7NB60

STP7NB60 STP7NB60FP N-CHANNEL 600V - 1.0 - 7.2A TO-220/TO-220FP PowerMESH MOSFET Table 1. General Features Figure 1. Package Type VDSS RDS(on) ID STP7NB60 600 V ... See More ⇒

 8.1. Size:301K  st
 stp7nb30.pdf pdf_icon

STP7NB60

STP7NB30 STP7NB30FP N - CHANNEL 300V - 0.75 - 7A - TO-220/TO-220FP PowerMESH MOSFET TYPE V R I DSS DS(on) D STP7NB30 300 V ... See More ⇒

 8.2. Size:337K  st
 stp7nb80-fp.pdf pdf_icon

STP7NB60

STP7NB80 STP7NB80FP N - CHANNEL 800V - 1.2 - 6.5A - TO-220/TO-220FP PowerMESH MOSFET TYPE VDSS RDS(on) ID STP7NB80 800 V ... See More ⇒

 8.3. Size:334K  st
 stp7nb40.pdf pdf_icon

STP7NB60

STP7NB40 STP7NB40FP N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYPE VDSS RDS(on) ID STP7NB40 400 V ... See More ⇒

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Detailed specifications: STP75N20, STP75N75F4, STP75NF75FP, STP77N6F6, STP7N105K5, STP7N60M2, STP7N65M2, STP7N80K5, 60N06, STP7NK40ZFP, STP7NM50N, STP80N10F7, STP80N6F6, STP80N70F6, STP80NE03L-06, STP80NE06-10, STP80NF03L

Keywords - STP7NB60 MOSFET specs

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