All MOSFET. STP7NB60 Datasheet

 

STP7NB60 Datasheet and Replacement


   Type Designator: STP7NB60
   Marking Code: P7NB60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 7.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 30 nC
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 165 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO-220
 

 STP7NB60 substitution

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STP7NB60 Datasheet (PDF)

 ..1. Size:276K  st
 stp7nb60.pdf pdf_icon

STP7NB60

STP7NB60STP7NB60FPN-CHANNEL 600V - 1.0 - 7.2A TO-220/TO-220FPPowerMESH MOSFETTable 1. General Features Figure 1. PackageType VDSS RDS(on) IDSTP7NB60 600 V

 8.1. Size:301K  st
 stp7nb30.pdf pdf_icon

STP7NB60

STP7NB30STP7NB30FPN - CHANNEL 300V - 0.75 - 7A - TO-220/TO-220FPPowerMESH MOSFETTYPE V R IDSS DS(on) DSTP7NB30 300 V

 8.2. Size:337K  st
 stp7nb80-fp.pdf pdf_icon

STP7NB60

STP7NB80STP7NB80FPN - CHANNEL 800V - 1.2 - 6.5A - TO-220/TO-220FPPowerMESH MOSFETTYPE VDSS RDS(on) IDSTP7NB80 800 V

 8.3. Size:334K  st
 stp7nb40.pdf pdf_icon

STP7NB60

STP7NB40STP7NB40FPN - CHANNEL ENHANCEMENT MODEPowerMESH MOSFETTYPE VDSS RDS(on) IDSTP7NB40 400 V

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Keywords - STP7NB60 MOSFET datasheet

 STP7NB60 cross reference
 STP7NB60 equivalent finder
 STP7NB60 lookup
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 STP7NB60 replacement

 

 
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