STQ1NK60ZR-AP Datasheet and Replacement
Type Designator: STQ1NK60ZR-AP
Marking Code: 1NK60ZR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 17.6 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 13 Ohm
Package: TO-92
STQ1NK60ZR-AP substitution
STQ1NK60ZR-AP Datasheet (PDF)
stq1nk60zr-ap.pdf
STN1NK60ZSTQ1NK60ZR-APN-channel 600 V, 13 , 0.8 A TO-92, SOT-223Zener-protected SuperMESH Power MOSFETFeaturesOrder codes VDSS RDS(on) ID PwSTQ1NK60ZR-AP 3 W600 V
std1lnk60z-1 stq1nk60zr-ap stn1nk60z.pdf
STD1LNK60Z-1STQ1NK60ZR-AP - STN1NK60ZN-channel 600V - 13 - 0.8A - TO-92 - TO-251 - SOT-223Zener-Protected SuperMESH Power MOSFETFeaturesType VDSS RDS(on) ID PwSTD1LNK60Z-1 600V
stn1nk60z stq1nk60zr.pdf
STN1NK60Z, STQ1NK60ZRN-channel 600 V, 13 typ., 0.3 A Zener-protected SuperMESH Power MOSFETs in SOT-223 and TO-92 packagesDatasheet - production dataFeaturesVDS RDS(on)max ID PTOTOrder codes4 STN1NK60Z 3.3 W600 V 15 0.3 ASTQ1NK60ZR-AP 3 W321 100% avalanche testedSOT-223TO-92 (Ammopak) Extremely high dv/dt capability Gate charge minimized
std1nk80z-1 std1nk80zt4 stq1nk80zr-ap.pdf
STQ1NK80ZR-AP - STN1NK80ZSTD1NK80Z - STD1NK80Z-1N-CHANNEL 800V - 13 - 1 A TO-92 /SOT-223/DPAK/IPAKZener - Protected SuperMESH MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID Pw2STQ1NK80ZR-AP 800 V
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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