STQ1NK60ZR-AP Specs and Replacement

Type Designator: STQ1NK60ZR-AP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 17.6 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 13 Ohm

Package: TO-92

STQ1NK60ZR-AP substitution

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STQ1NK60ZR-AP datasheet

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 stq1nk60zr-ap.pdf pdf_icon

STQ1NK60ZR-AP

STN1NK60Z STQ1NK60ZR-AP N-channel 600 V, 13 , 0.8 A TO-92, SOT-223 Zener-protected SuperMESH Power MOSFET Features Order codes VDSS RDS(on) ID Pw STQ1NK60ZR-AP 3 W 600 V ... See More ⇒

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 std1lnk60z-1 stq1nk60zr-ap stn1nk60z.pdf pdf_icon

STQ1NK60ZR-AP

STD1LNK60Z-1 STQ1NK60ZR-AP - STN1NK60Z N-channel 600V - 13 - 0.8A - TO-92 - TO-251 - SOT-223 Zener-Protected SuperMESH Power MOSFET Features Type VDSS RDS(on) ID Pw STD1LNK60Z-1 600V ... See More ⇒

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 stn1nk60z stq1nk60zr.pdf pdf_icon

STQ1NK60ZR-AP

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 std1nk80z-1 std1nk80zt4 stq1nk80zr-ap.pdf pdf_icon

STQ1NK60ZR-AP

STQ1NK80ZR-AP - STN1NK80Z STD1NK80Z - STD1NK80Z-1 N-CHANNEL 800V - 13 - 1 A TO-92 /SOT-223/DPAK/IPAK Zener - Protected SuperMESH MOSFET Table 1 General Features Figure 1 Package TYPE VDSS RDS(on) ID Pw 2 STQ1NK80ZR-AP 800 V ... See More ⇒

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Detailed specifications: STP9N60M2, STP9N65M2, STP9NK50ZFP, STP9NK60ZD, STP9NK60ZFP, STP9NK80Z, STP9NM50N, STQ1HN60K3-AP, IRF1404, STQ1NK80ZR-AP, STQ2LN60K3-AP, STQ3NK50ZR-AP, STR1P2UH7, STR2N2VH5, STR2P3LLH6, STRH100N10, STRH100N6

Keywords - STQ1NK60ZR-AP MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.