STQ1NK60ZR-AP MOSFET. Datasheet pdf. Equivalent

   Type Designator: STQ1NK60ZR-AP
   Marking Code: 1NK60ZR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 0.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 17.6 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 13 Ohm
   Package: TO-92

STQ1NK60ZR-AP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

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