All MOSFET. STQ2LN60K3-AP Datasheet

 

STQ2LN60K3-AP Datasheet and Replacement


   Type Designator: STQ2LN60K3-AP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 0.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8.5 nS
   Cossⓘ - Output Capacitance: 22 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm
   Package: TO-92
 

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STQ2LN60K3-AP Datasheet (PDF)

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STQ2LN60K3-AP

STQ2LN60K3-APN-channel 600 V, 4 typ., 0.6 A SuperMESH3 Power MOSFET in TO-92 packageDatasheet production dataFeaturesRDS(on) Order code VDSS max ID PTOTSTQ2LN60K3-AP 600 V

Datasheet: STP9NK50ZFP , STP9NK60ZD , STP9NK60ZFP , STP9NK80Z , STP9NM50N , STQ1HN60K3-AP , STQ1NK60ZR-AP , STQ1NK80ZR-AP , IRF640N , STQ3NK50ZR-AP , STR1P2UH7 , STR2N2VH5 , STR2P3LLH6 , STRH100N10 , STRH100N6 , STRH12P10 , STRH40N6 .

History: FQD10N20TF

Keywords - STQ2LN60K3-AP MOSFET datasheet

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