STQ2LN60K3-AP Datasheet and Replacement
Type Designator: STQ2LN60K3-AP
Marking Code: 2LN60K3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id| ⓘ - Maximum Drain Current: 0.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 12 nC
tr ⓘ - Rise Time: 8.5 nS
Cossⓘ - Output Capacitance: 22 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm
Package: TO-92
STQ2LN60K3-AP substitution
STQ2LN60K3-AP Datasheet (PDF)
..1. Size:813K st
stq2ln60k3-ap.pdf
stq2ln60k3-ap.pdf
STQ2LN60K3-APN-channel 600 V, 4 typ., 0.6 A SuperMESH3 Power MOSFET in TO-92 packageDatasheet production dataFeaturesRDS(on) Order code VDSS max ID PTOTSTQ2LN60K3-AP 600 V
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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