STQ2LN60K3-AP Specs and Replacement

Type Designator: STQ2LN60K3-AP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.5 nS

Cossⓘ - Output Capacitance: 22 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm

Package: TO-92

STQ2LN60K3-AP substitution

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STQ2LN60K3-AP datasheet

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STQ2LN60K3-AP

STQ2LN60K3-AP N-channel 600 V, 4 typ., 0.6 A SuperMESH3 Power MOSFET in TO-92 package Datasheet production data Features RDS(on) Order code VDSS max ID PTOT STQ2LN60K3-AP 600 V ... See More ⇒

Detailed specifications: STP9NK50ZFP, STP9NK60ZD, STP9NK60ZFP, STP9NK80Z, STP9NM50N, STQ1HN60K3-AP, STQ1NK60ZR-AP, STQ1NK80ZR-AP, IRFB4110, STQ3NK50ZR-AP, STR1P2UH7, STR2N2VH5, STR2P3LLH6, STRH100N10, STRH100N6, STRH12P10, STRH40N6

Keywords - STQ2LN60K3-AP MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs