STR1P2UH7 Specs and Replacement

Type Designator: STR1P2UH7

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 1.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 66 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: SOT-23

STR1P2UH7 substitution

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STR1P2UH7 datasheet

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STR1P2UH7

STR1P2UH7 P-channel 20 V, 0.087 typ., 1.4 A STripFET H7 Power MOSFET in a SOT-23 package Datasheet - production data Features Order code V R max I DS DS(on) D STR1P2UH7 20 V 0.1 @ 4.5 1.4 A Very low on-resistance Very low capacitance and gate charge High avalanche ruggedness Applications Switching applications Figure 1 Internal schematic diagr... See More ⇒

Detailed specifications: STP9NK60ZFP, STP9NK80Z, STP9NM50N, STQ1HN60K3-AP, STQ1NK60ZR-AP, STQ1NK80ZR-AP, STQ2LN60K3-AP, STQ3NK50ZR-AP, IRFP260N, STR2N2VH5, STR2P3LLH6, STRH100N10, STRH100N6, STRH12P10, STRH40N6, STRH40P10, STRH8N10

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.