All MOSFET. STR2N2VH5 Datasheet

 

STR2N2VH5 Datasheet and Replacement


   Type Designator: STR2N2VH5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 2.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14.4 nS
   Cossⓘ - Output Capacitance: 92 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SOT-23
 

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STR2N2VH5 Datasheet (PDF)

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STR2N2VH5

STR2N2VH5N-channel 20 V, 0.025 typ., 2.3 A STripFET H5 Power MOSFET in a SOT-23 packageDatasheet production dataFeatures Order code VDS RDS(on) max ID PTOTSTR2N2VH5 20 V 0.03 (VGS=4.5 V) 2.3 A 0.35 W3 Low on-resistance RDS(on)2 High avalanche ruggedness1 Low gate drive power lossSOT-23Applications Switching applicationsDescriptionFigu

Datasheet: STP9NK80Z , STP9NM50N , STQ1HN60K3-AP , STQ1NK60ZR-AP , STQ1NK80ZR-AP , STQ2LN60K3-AP , STQ3NK50ZR-AP , STR1P2UH7 , IRF3710 , STR2P3LLH6 , STRH100N10 , STRH100N6 , STRH12P10 , STRH40N6 , STRH40P10 , STRH8N10 , STS10P3LLH6 .

History: HM5N60K | VBZE45N03 | RJK0629DPE | HM5N30R | MTN1308E3 | 7NM65G-TMS2-T | IXTA86N20T

Keywords - STR2N2VH5 MOSFET datasheet

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