STR2N2VH5 Datasheet and Replacement
Type Designator: STR2N2VH5
Marking Code: STD1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.7 V
|Id| ⓘ - Maximum Drain Current: 2.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 4.6 nC
tr ⓘ - Rise Time: 14.4 nS
Cossⓘ - Output Capacitance: 92 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SOT-23
STR2N2VH5 substitution
STR2N2VH5 Datasheet (PDF)
str2n2vh5.pdf
STR2N2VH5N-channel 20 V, 0.025 typ., 2.3 A STripFET H5 Power MOSFET in a SOT-23 packageDatasheet production dataFeatures Order code VDS RDS(on) max ID PTOTSTR2N2VH5 20 V 0.03 (VGS=4.5 V) 2.3 A 0.35 W3 Low on-resistance RDS(on)2 High avalanche ruggedness1 Low gate drive power lossSOT-23Applications Switching applicationsDescriptionFigu
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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