STR2N2VH5 Specs and Replacement

Type Designator: STR2N2VH5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14.4 nS

Cossⓘ - Output Capacitance: 92 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SOT-23

STR2N2VH5 substitution

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STR2N2VH5 datasheet

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STR2N2VH5

STR2N2VH5 N-channel 20 V, 0.025 typ., 2.3 A STripFET H5 Power MOSFET in a SOT-23 package Datasheet production data Features Order code VDS RDS(on) max ID PTOT STR2N2VH5 20 V 0.03 (VGS=4.5 V) 2.3 A 0.35 W 3 Low on-resistance RDS(on) 2 High avalanche ruggedness 1 Low gate drive power loss SOT-23 Applications Switching applications Description Figu... See More ⇒

Detailed specifications: STP9NK80Z, STP9NM50N, STQ1HN60K3-AP, STQ1NK60ZR-AP, STQ1NK80ZR-AP, STQ2LN60K3-AP, STQ3NK50ZR-AP, STR1P2UH7, AO3400, STR2P3LLH6, STRH100N10, STRH100N6, STRH12P10, STRH40N6, STRH40P10, STRH8N10, STS10P3LLH6

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.