All MOSFET. STR2P3LLH6 Datasheet

 

STR2P3LLH6 Datasheet and Replacement


   Type Designator: STR2P3LLH6
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 79 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm
   Package: SOT-23
 

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STR2P3LLH6 Datasheet (PDF)

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STR2P3LLH6

STR2P3LLH6 P-channel 30 V, 0.048 typ., 2 A STripFET H6 Power MOSFET in a SOT-23 package Datasheet - production data Features Order code V R max I DS DS(on) DSTR2P3LLH6 30 V 0.056 @ 10 V 2 A Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Figure 1: Internal

Datasheet: STP9NM50N , STQ1HN60K3-AP , STQ1NK60ZR-AP , STQ1NK80ZR-AP , STQ2LN60K3-AP , STQ3NK50ZR-AP , STR1P2UH7 , STR2N2VH5 , AON6414A , STRH100N10 , STRH100N6 , STRH12P10 , STRH40N6 , STRH40P10 , STRH8N10 , STS10P3LLH6 , STS10P4LLF6 .

History: AOTF11N70 | AP15T15GH-HF

Keywords - STR2P3LLH6 MOSFET datasheet

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