STR2P3LLH6 Specs and Replacement

Type Designator: STR2P3LLH6

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 79 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm

Package: SOT-23

STR2P3LLH6 substitution

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STR2P3LLH6 datasheet

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STR2P3LLH6

STR2P3LLH6 P-channel 30 V, 0.048 typ., 2 A STripFET H6 Power MOSFET in a SOT-23 package Datasheet - production data Features Order code V R max I DS DS(on) D STR2P3LLH6 30 V 0.056 @ 10 V 2 A Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Figure 1 Internal... See More ⇒

Detailed specifications: STP9NM50N, STQ1HN60K3-AP, STQ1NK60ZR-AP, STQ1NK80ZR-AP, STQ2LN60K3-AP, STQ3NK50ZR-AP, STR1P2UH7, STR2N2VH5, IRFB4227, STRH100N10, STRH100N6, STRH12P10, STRH40N6, STRH40P10, STRH8N10, STS10P3LLH6, STS10P4LLF6

Keywords - STR2P3LLH6 MOSFET specs

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