All MOSFET. STRH40P10 Datasheet

 

STRH40P10 Datasheet and Replacement


   Type Designator: STRH40P10
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 176 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 34 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 635 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: TO-254AA
 

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STRH40P10 Datasheet (PDF)

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STRH40P10

STRH40P10Rad-Hard P-channel 100 V, 34 A Power MOSFETDatasheet - production dataFeaturesVBDSS ID RDS(on)Qg100 V 34 A 0.060 Ohm 162 nC Fast switching 100% avalanche tested3 Hermetic package21 100 krad TIDTO-254AA SEE radiation hardenedApplicationsFigure 1. Internal schematic diagram Satellite High reliabilityD (1)DescriptionThis P

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STRH40P10

STRH40N6Rad-Hard N-channel 60 V, 30 A Power MOSFETDatasheet - production dataFeaturesVBDSS ID RDS(on) Qg60 V 30 A 36 mOhm 43 nC Fast switching 100% avalanche tested Hermetic package 70 krad TIDSMD.5 SEE radiation hardenedApplications SatelliteFigure 1. Internal schematic diagram High reliabilityDescriptionThis N-channel Power MOSFET is dev

Datasheet: STQ3NK50ZR-AP , STR1P2UH7 , STR2N2VH5 , STR2P3LLH6 , STRH100N10 , STRH100N6 , STRH12P10 , STRH40N6 , IRFP250N , STRH8N10 , STS10P3LLH6 , STS10P4LLF6 , STS10PF30L , STS12NH3LL , STS15N4LLF3 , STS15N4LLF5 , STS17NF3LL .

History: FDU8580 | VBM165R12 | VBE165R10 | PA110ED

Keywords - STRH40P10 MOSFET datasheet

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