All MOSFET. STRH8N10 Datasheet

 

STRH8N10 Datasheet and Replacement


   Type Designator: STRH8N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 18.5 nC
   trⓘ - Rise Time: 5.5 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: SMD0.5
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STRH8N10 Datasheet (PDF)

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STRH8N10

STRH8N10Rad-Hard 100 V, 6 A N-channel Power MOSFETDatasheet - production dataFeaturesVDSS ID RDS(on) Qg100 V 6 A 0.30 22 nC Fast switching 100% avalanche tested Hermetic package 70 krad TIDSMD0.5 SEE radiation hardenedApplicationsFigure 1. Internal schematic diagram Satellite High reliability DescriptionThis N-channel Power MOSFET is deve

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: BUZ84 | FQA24N50F109 | AON6794 | IRFHM792PBF | BL10N70-A | CED05N8

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