STRH8N10 Specs and Replacement

Type Designator: STRH8N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.5 nS

Cossⓘ - Output Capacitance: 95 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: SMD0.5

STRH8N10 substitution

- MOSFET ⓘ Cross-Reference Search

 

STRH8N10 datasheet

 ..1. Size:798K  st
 strh8n10.pdf pdf_icon

STRH8N10

STRH8N10 Rad-Hard 100 V, 6 A N-channel Power MOSFET Datasheet - production data Features VDSS ID RDS(on) Qg 100 V 6 A 0.30 22 nC Fast switching 100% avalanche tested Hermetic package 70 krad TID SMD0.5 SEE radiation hardened Applications Figure 1. Internal schematic diagram Satellite High reliability Description This N-channel Power MOSFET is deve... See More ⇒

Detailed specifications: STR1P2UH7, STR2N2VH5, STR2P3LLH6, STRH100N10, STRH100N6, STRH12P10, STRH40N6, STRH40P10, P55NF06, STS10P3LLH6, STS10P4LLF6, STS10PF30L, STS12NH3LL, STS15N4LLF3, STS15N4LLF5, STS17NF3LL, STS17NH3LL

Keywords - STRH8N10 MOSFET specs

 STRH8N10 cross reference

 STRH8N10 equivalent finder

 STRH8N10 pdf lookup

 STRH8N10 substitution

 STRH8N10 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.