All MOSFET. STRH8N10 Datasheet

 

STRH8N10 Datasheet and Replacement


   Type Designator: STRH8N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.5 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: SMD0.5
 

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STRH8N10 Datasheet (PDF)

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STRH8N10

STRH8N10Rad-Hard 100 V, 6 A N-channel Power MOSFETDatasheet - production dataFeaturesVDSS ID RDS(on) Qg100 V 6 A 0.30 22 nC Fast switching 100% avalanche tested Hermetic package 70 krad TIDSMD0.5 SEE radiation hardenedApplicationsFigure 1. Internal schematic diagram Satellite High reliability DescriptionThis N-channel Power MOSFET is deve

Datasheet: STR1P2UH7 , STR2N2VH5 , STR2P3LLH6 , STRH100N10 , STRH100N6 , STRH12P10 , STRH40N6 , STRH40P10 , IRFB4115 , STS10P3LLH6 , STS10P4LLF6 , STS10PF30L , STS12NH3LL , STS15N4LLF3 , STS15N4LLF5 , STS17NF3LL , STS17NH3LL .

Keywords - STRH8N10 MOSFET datasheet

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