All MOSFET. STS3P6F6 Datasheet

 

STS3P6F6 Datasheet and Replacement


   Type Designator: STS3P6F6
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.3 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: SO-8
 

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STS3P6F6 Datasheet (PDF)

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STS3P6F6

STS3P6F6P-channel 60 V, 0.13 typ., 3 A STripFET F6 Power MOSFET in a SO-8 packageDatasheet - production dataFeaturesOrder code VDSS RDS(on)max ID567 STN3P6F6 60 V 0.16 @ 10 V 3 A8 RDS(on) * Qg industry benchmark4 Extremely low on-resistance RDS(on)321 High avalanche ruggednessSO-8 Low gate drive power lossesApplications Switching

Datasheet: STS12NH3LL , STS15N4LLF3 , STS15N4LLF5 , STS17NF3LL , STS17NH3LL , STS1HNK60 , STS25NH3LL , STS2DPFS20V , IRLB4132 , STS4DNFS30 , STS4DPFS30L , STS5DP3LLH6 , STS5P3LLH6 , STS5PF20V , STS6P3LLH6 , STS6PF30L , STS7P4LLF6 .

History: FDU8876 | NCE60P25

Keywords - STS3P6F6 MOSFET datasheet

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