STS3P6F6 Specs and Replacement

Type Designator: STS3P6F6

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.3 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: SO-8

STS3P6F6 substitution

- MOSFET ⓘ Cross-Reference Search

 

STS3P6F6 datasheet

 ..1. Size:928K  st
 sts3p6f6.pdf pdf_icon

STS3P6F6

STS3P6F6 P-channel 60 V, 0.13 typ., 3 A STripFET F6 Power MOSFET in a SO-8 package Datasheet - production data Features Order code VDSS RDS(on)max ID 5 6 7 STN3P6F6 60 V 0.16 @ 10 V 3 A 8 RDS(on) * Qg industry benchmark 4 Extremely low on-resistance RDS(on) 3 2 1 High avalanche ruggedness SO-8 Low gate drive power losses Applications Switching ... See More ⇒

Detailed specifications: STS12NH3LL, STS15N4LLF3, STS15N4LLF5, STS17NF3LL, STS17NH3LL, STS1HNK60, STS25NH3LL, STS2DPFS20V, IRLB4132, STS4DNFS30, STS4DPFS30L, STS5DP3LLH6, STS5P3LLH6, STS5PF20V, STS6P3LLH6, STS6PF30L, STS7P4LLF6

Keywords - STS3P6F6 MOSFET specs

 STS3P6F6 cross reference

 STS3P6F6 equivalent finder

 STS3P6F6 pdf lookup

 STS3P6F6 substitution

 STS3P6F6 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.