STS9NH3LL MOSFET. Datasheet pdf. Equivalent

   Type Designator: STS9NH3LL
   Marking Code: S9NH3LL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7 nC
   trⓘ - Rise Time: 14.5 nS
   Cossⓘ - Output Capacitance: 147 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: SO-8

STS9NH3LL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

STS9NH3LL Datasheet (PDF)

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sts9nh3ll.pdf

STS9NH3LLN-channel 30 V - 0.018 - 9 A - SO-8low gate charge STripFET III Power MOSFETFeatures RDS(on) Type VDSS IDmaxSTS9NH3LL 30 V 0.022 9 A Optimal RDS(on) x Qg trade-off @ 4.5 V Conduction losses reducedSO-8 Switching losses reducedApplication Switching applicationsDescriptionFigure 1. Internal schematic diagramThis application specific

9.1. Size:281K st
sts9nf30l.pdf